Dual-band plasmonic resonance-enhanced absorptance in Au/Si:Te heterostructures for mid-infrared applications
Abstract
This work reveals enhanced infrared optical properties in plasmonic Au/Si:Te heterostructures, where hyperdoped Si:Te layers fabricated via Te ion implantation and flashlamp annealing exhibit ∼20% broadband sub-bandgap absorption across 2–5 μm. Integration with Au nanostructures induces dual plasmonic resonances at 2.7 and 4.4 μm, boosting peak absorptance to 52%–83%. Electromagnetic simulations attribute this enhancement to plasmon-dielectric hybridization, where strong near-field amplification at the Au/Si:Te interface intensifies mid-gap state transitions in Si:Te. Concurrently, resonant energy transfer occurs, as grating-confined surface plasmons concentrate incident radiation, enhancing photon-impurity interactions. Geometric tuning further enables spectral selectivity with wavelength-specific absorption enhancement. The hyperdoped Si:Te heterostructures demonstrate complementary metal-oxide-semiconductor-compatible tailoring of light-matter interactions through hybrid plasmonic and impurity-band effects.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (15)
Songyuan Peng
Key Laboratory of Micro-Nano Optoelectronic Materials and Devices at Sichuan Normal University of Sichuan Province 1 , Chengdu 610101,
Anyang Wang
School of Electrical Engineering and Automation, Wuhan University 1 , Wuhan, Hubei 430072,
M. S. Shaikh
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research 3 , Bautzner Landstraße 400, 01328 Dresden,
R. Hübner
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research 3 , Bautzner Landstraße 400, 01328 Dresden,
Tingting Wang
State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry
Minjuan Yuan
Key Laboratory of Micro-Nano Optoelectronic Materials and Devices at Sichuan Normal University of Sichuan Province 1 , Chengdu 610101,
R. Heller
U. Kentsch
Yijia Huang
Jianqi Zhu
Key Laboratory of Micro-Nano Optoelectronic Materials and Devices at Sichuan Normal University of Sichuan Province 1 , Chengdu 610101,
Mingyang Tian
Key Laboratory of Micro-Nano Optoelectronic Materials and Devices at Sichuan Normal University of Sichuan Province 1 , Chengdu 610101,
Ling Li
Shengqiang Zhou
Feng Chen
Mao Wang