Diverse nanostructures of bc8 silicon mediated by controllable transition kinetics of beta-Sn silicon

Y Yingxue Han (Center for High Pressure Science and Technology Advanced Research (HPSTAR) , Beijing 100193,) S Shang Peng (Center for High Pressure Science and Technology Advanced Research (HPSTAR)) M Mei Li J Jun Yuan T Tingting Zhao B Bohao Zhao (Center for High Pressure Science and Technology Advanced Research (HPSTAR)) Y Yanlong Chen Q Qi Feng J Jiao An (Center for High Pressure Science and Technology Advanced Research (HPSTAR)) C Chuanlong Lin (Center for High Pressure Science and Technology Advanced Research (HPSTAR))

Abstract

Metastable polymorphs of silicon exhibit direct and narrow band gaps, offering broad application potential. The transition kinetics in the formation of metastable Si have been extensively studied, but the relationship between transition conditions and nanostructures of product phases remains unclear. Here, we report diverse nanostructures of body-centered cubic (bc8) Si formed by rapid decompression of beta-Sn Si at different rates. High-resolution transmission electron microscopy images show slow decompression results in the formation of bc8 nanocrystals with long-range order and abundant interfacial defects, including dislocation, twin, stacking fault, and internal lattice strain. In contrast, rapid decompression generates bc8 nanoclusters with a macroscopic amorphous characteristic, as evidenced by the broad diffuse halo in fast Fourier transform pattern. Statistical analysis of the size distribution shows that the grain size decreases with the increasing decompression rate, indicating a clear rate-dependent behavior. These findings provide structural evidence and mechanistic insights into the kinetically controlled formation of the metastable nanostructures for promising applications.

Article Details

Volume / Issue Vol. 128, Issue 10
Published March 09, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

Y

Yingxue Han

Center for High Pressure Science and Technology Advanced Research (HPSTAR) , Beijing 100193,

S

Shang Peng

Center for High Pressure Science and Technology Advanced Research (HPSTAR)

M

Mei Li

J

Jun Yuan

T

Tingting Zhao

B

Bohao Zhao

Center for High Pressure Science and Technology Advanced Research (HPSTAR)

Y

Yanlong Chen

Q

Qi Feng

J

Jiao An

Center for High Pressure Science and Technology Advanced Research (HPSTAR)

C

Chuanlong Lin

Center for High Pressure Science and Technology Advanced Research (HPSTAR)