Disentanglement of physical mechanisms for driving and detection in piezoelectric nanoelectromechanical systems

A Andrey A. Shevyrin (Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,) A Arthur G. Pogosov (Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,) T Timur M. Ibyatov (Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,) A Askhat K. Bakarov (Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,) A Alexander A. Shklyaev (Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,) A Akshay Naik (Centre for Nano Science and Engineering, Indian Institute of Science Bangalore 2 , Bangalore, Karnataka 560012,)

Abstract

Nanoelectromechanical systems based on (Al,Ga)As/GaAs heterostructures with a two-dimensional electron gas can rely on both piezoelectric and electrostatic driving and detection. While this multifunctionality may be beneficial, disentanglement of these two physical mechanisms is important. In a multi-mode nanoelectromechanical system, we experimentally discern the electrostatic and piezoelectric effects in various configurations. A well-controlled system relying entirely on the electrostatic effect is demonstrated, where a field-effect transistor reads out the oscillations of its cantilevered side gate. We show that, apart from the two mentioned mechanisms, an additional time-delayed driving force arises due to the generation of bulk acoustic waves in the entire chip.

Article Details

Volume / Issue Vol. 127, Issue 14
Published October 06, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

A

Andrey A. Shevyrin

Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,

A

Arthur G. Pogosov

Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,

T

Timur M. Ibyatov

Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,

A

Askhat K. Bakarov

Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,

A

Alexander A. Shklyaev

Rzhanov Institute of Semiconductor Physics SB RAS 1 , 13 Lavrentyeva ave., Novosibirsk 630090,

A

Akshay Naik

Centre for Nano Science and Engineering, Indian Institute of Science Bangalore 2 , Bangalore, Karnataka 560012,