Direct imaging of temperature evolution of polar nanoregions and chemically ordered regions in PMN relaxor: Evidence for polar phase percolation

K Kohei Hino (Graduate School of Engineering, Tohoku University 1 , Sendai 980-8579,) D Daisuke Morikawa (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 2 , Sendai 980-8577,) D Desheng Fu (Department of Electronics and Materials Science, Faculty of Engineering and Department of Engineering, Graduate School of Integrated Science and Technology, Shizuoka University 3 , Hamamatsu 432-8561, and , Hamamatsu 432-8011,) M Mitsuru Itoh (Institute of Science Tokyo, Environmental Safety Center 4 , Yokohama 226-8501,) K Kenji Tsuda (Institute of Multidisciplinary Research for Advanced Materials)

Abstract

Polar nanoregions (PNRs) are central to understanding the exceptional dielectric and piezoelectric properties of relaxor ferroelectrics and are key to advancing dielectrics for high-energy storage. However, direct real-space imaging of their formation and evolution remains a major challenge in condensed matter physics. Here, we report the real-space mappings of both PNRs and chemically ordered regions (CORs) in the prototypical relaxor Pb(Mg1/3Nb2/3)O3 and their temperature dependence using convergent-beam electron diffraction combined with four-dimensional scanning transmission electron microscopy. The results reveal that CORs, with sizes of 2–5 nm, remain static with temperature and act to suppress PNR growth. In contrast, PNRs evolve from isolated 2–5 nm regions at room temperature to interconnected structures ∼10 nm in size at low temperatures, indicative of a percolation transition. These observations support the random-field model, in which PNRs emerge from a paraelectric matrix and their growth and collective interactions are constrained by random local fields associated with CORs.

Article Details

Volume / Issue Vol. 128, Issue 14
Published April 06, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

K

Kohei Hino

Graduate School of Engineering, Tohoku University 1 , Sendai 980-8579,

D

Daisuke Morikawa

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 2 , Sendai 980-8577,

D

Desheng Fu

Department of Electronics and Materials Science, Faculty of Engineering and Department of Engineering, Graduate School of Integrated Science and Technology, Shizuoka University 3 , Hamamatsu 432-8561, and , Hamamatsu 432-8011,

M

Mitsuru Itoh

Institute of Science Tokyo, Environmental Safety Center 4 , Yokohama 226-8501,

K

Kenji Tsuda

Institute of Multidisciplinary Research for Advanced Materials