Detection, identification, and impact of native point defects on conduction in ITO thin films
Abstract
We used depth-resolved cathodoluminescence spectroscopy and van-der-Pauw-Hall measurements to determine the effects of molecular beam epitaxy growth and processing conditions on native point defects in indium tin oxide (ITO). The near-nanometer depth resolution of this optical technique enabled us to identify spectral changes associated with removing or creating these defects, leading to the identification of oxygen-related defects in the indium tin oxide bandgap. The combined near-surface detection and processing of ITO together with their correlation with Hall effect mobility indicates an avenue for identifying the physical nature and reducing the density of specific native point defects to increase the free carrier concentration and conductivity of ultrathin ITO.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (7)
Jacob (Jade) Cowsky
Department of Electrical and Computer Engineering, The Ohio State University 1 , Columbus, Ohio 43210,
David C. Look
Semiconductor Research Center, Wright State University 2 , Dayton, Ohio 45435,
Kevin Leedy
Air Force Research Laboratory 3 , Sensors Directorate, Wright-Patterson AFB, Ohio 45433,
Intuon Chatratin
Department of Materials Science and Engineering, University of Delaware 4 , Newark, Delaware 19716,
Anderson Janotti
Department of Materials Science and Engineering, University of Delaware 4 , Newark, Delaware 19716,
Oliver Bierwagen
Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund 5 , DE-10117 Berlin,
Leonard J. Brillson
Department of Electrical and Computer Engineering, The Ohio State University 1 , Columbus, Ohio 43210,