Depolarization modulated tunneling in ferroelectric tunnel junctions

S Somnath Kale (Department of Physical Sciences, Indian Institute of Science Education and Research Berhampur 1 , Berhampur 760010,) A Adrian Petraru (Nanoelectronics, Institute of Electrical Engineering and Information Engineering, Kiel University 2 , 24143 Kiel,) D Dibyajyoti Sahoo (Department of Physical Sciences, Indian Institute of Science Education and Research Berhampur 1 , Berhampur 760010,) H Hermann Kohlstedt (Nanoelectronics, Institute of Electrical Engineering and Information Engineering, Kiel University 2 , 24143 Kiel,) R Rohit Soni (Department of Physical Sciences, Indian Institute of Science Education and Research Berhampur 1 , Berhampur 760010,)

Abstract

We investigate charge tunneling in asymmetric junctions comprising a ferroelectric barrier BaTiO3 with a common La0.7Sr0.3MnO3 bottom electrode and various metallic top electrodes. Quantitative analysis of tunneling electroresistance within a direct tunneling framework reveals that the net change in average barrier potential upon polarization reversal scales with the depolarizing electrostatic field, governed by screening asymmetry at the ferroelectric–electrode interfaces. The observed electrode-dependent tunneling electroresistance is thus primarily controlled by the potential barrier height at the top interface. Our results, supported by theoretical considerations and experimentally determined lower bounds to the depolarization field, emphasize the key role of interface electrostatics in ferroelectric tunneling transport.

Article Details

Volume / Issue Vol. 129, Issue 2
Published July 13, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

S

Somnath Kale

Department of Physical Sciences, Indian Institute of Science Education and Research Berhampur 1 , Berhampur 760010,

A

Adrian Petraru

Nanoelectronics, Institute of Electrical Engineering and Information Engineering, Kiel University 2 , 24143 Kiel,

D

Dibyajyoti Sahoo

Department of Physical Sciences, Indian Institute of Science Education and Research Berhampur 1 , Berhampur 760010,

H

Hermann Kohlstedt

Nanoelectronics, Institute of Electrical Engineering and Information Engineering, Kiel University 2 , 24143 Kiel,

R

Rohit Soni

Department of Physical Sciences, Indian Institute of Science Education and Research Berhampur 1 , Berhampur 760010,