Current-controlled magnetism and resultant nonvolatile multi-state memory devices in Co-doped van der Waals magnet

Z Zhenqi Wu (New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,) X Xiaoqian Zhang (School of Physics) Z Zhendong Wang (State Key Laboratory of Green Chemical Engineering and Industrial Catalysis) K Kaifei Liu (New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,) R Rongshun Sun (New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,) K Kai Gu (Chemical Physics Theory Group, Department of Chemistry, University of Toronto , Toronto, Ontario M5S 3H6,) J Jiacheng Gao (New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,) S Shuo Wang L Lujun Wei (School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,) P Ping Liu (Chemistry Department) W Wei Niu Y Yong Pu (School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,)

Abstract

The control of van der Waals (vdW) magnets by spin–orbit torque (SOT) induced by in-plane current holds great potential for next-generation spintronic applications, offering high-density, ultrafast, and low-power solutions. However, the generation of SOT typically requires both strong spin–orbit coupling and broken inversion symmetry, which are often achieved in ferromagnet/heavy metal heterostructures. Here, we demonstrate highly tunable magnetic states and coercivity in a single vdW ferromagnet, (Fe0.74Co0.26)3GeTe2, driven by SOT. The SOT originates from the broken inversion symmetry, as evidenced by the second-order nonlinear Hall effect. This facilitates nonvolatile magnetization switching in (Fe0.74Co0.26)3GeTe2 nanodevices controllable with a low current density (∼106 A/cm2). Furthermore, we achieve up to 8 electrically switchable multi-level states, significantly enhancing information storage density and reducing computational costs. Our findings advance the electrical control of ferromagnetism and its integration into spintronic devices.

Article Details

Volume / Issue Vol. 127, Issue 20
Published November 17, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (12)

Z

Zhenqi Wu

New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,

X

Xiaoqian Zhang

School of Physics

Z

Zhendong Wang

State Key Laboratory of Green Chemical Engineering and Industrial Catalysis

K

Kaifei Liu

New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,

R

Rongshun Sun

New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,

K

Kai Gu

Chemical Physics Theory Group, Department of Chemistry, University of Toronto , Toronto, Ontario M5S 3H6,

J

Jiacheng Gao

New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,

S

Shuo Wang

L

Lujun Wei

School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,

P

Ping Liu

Chemistry Department

W

Wei Niu

Y

Yong Pu

School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,