Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires
Abstract
Indium-arsenide nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for quantum information processing. We use selective area growth of nanowires to realize scalable and planar nanowire device geometries that are compatible with standard semiconductor processing techniques. NWFETs are fabricated, and their low temperature characteristics, including ION/IOFF ratios, threshold voltages, sub-threshold slope, interfacial trap density, hysteresis, and mobility, are characterized. The NWFETs operate effectively in integrated circuitry relying on saturation-mode operation. In sub-threshold applications such as amplifiers, we find bandwidths exceeding our cryostat wiring, but the gate hysteresis presents challenges for precise tuning of the amplifier operating point. We discuss the role of crystal imperfections and fabrication processes on the transistor characteristics and propose strategies for further improvements.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (9)
Giulia Meucci
Department of Energy Conversion and Storage, Technical University of Denmark 1 , 2800 Kongens Lyngby,
Dāgs Olšteins
Department of Energy Conversion and Storage, Technical University of Denmark 1 , 2800 Kongens Lyngby,
Damon J. Carrad
Department of Energy Conversion and Storage, Technical University of Denmark 1 , 2800 Kongens Lyngby,
Gunjan Nagda
Department of Energy Conversion and Storage, Technical University of Denmark 1 , 2800 Kongens Lyngby,
Daria V. Beznasyuk
Department of Energy Conversion and Storage, Technical University of Denmark 1 , 2800 Kongens Lyngby,
Christian E. N. Petersen
Department of Energy Conversion and Storage, Technical University of Denmark 1 , 2800 Kongens Lyngby,
Sara Martí-Sánchez
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST 2 , Campus UAB, Bellaterra, Barcelona, Catalonia,
Jordi Arbiol
Catalan Institute of Nanoscience and Nanotechnology − ICN2 (CSIC and BIST), Campus UAB, Bellaterra, Barcelona, Catalonia 08193, Spain
Thomas Sand Jespersen
Department of Energy Conversion and Storage, Technical University of Denmark 1 , 2800 Kongens Lyngby,