Cryogenic enhancement of phononic four-wave mixing in AlScN/SiC

A A. K. Behera (Center for Integrated Nanotechnologies, Sandia National Laboratories 1 , Albuquerque, New Mexico 87185,) B B. Smith (Microsystems Engineering, Science, and Applications, Sandia National Laboratories 2 , Albuquerque, New Mexico 87123,) X X. Du (Department of Electrical and Systems Engineering, University of Pennsylvania 3 , Philadelphia, Pennsylvania 19104,) Y Y. Deng M M. Miller (Microsystems Engineering, Science, and Applications, Sandia National Laboratories 2 , Albuquerque, New Mexico 87123,) N N. Sagartz (Microsystems Engineering, Science, and Applications, Sandia National Laboratories 2 , Albuquerque, New Mexico 87123,) M M. Koppa (Microsystems Engineering, Science, and Applications, Sandia National Laboratories 2 , Albuquerque, New Mexico 87123,) C C. T. Harris (Center for Integrated Nanotechnologies, Sandia National Laboratories 1 , Albuquerque, New Mexico 87185,) M M. Lilly (Center for Integrated Nanotechnologies, Sandia National Laboratories 1 , Albuquerque, New Mexico 87185,) R R. H. Olsson (Department of Electrical and Systems Engineering, University of Pennsylvania 3 , Philadelphia, Pennsylvania 19104,) M M. Eichenfield (Center for Integrated Nanotechnologies, Sandia National Laboratories 1 , Albuquerque, New Mexico 87185,) L L. Hackett (Microsystems Engineering, Science, and Applications, Sandia National Laboratories 2 , Albuquerque, New Mexico 87123,)

Abstract

Surface acoustic wave platforms based on piezoelectric thin-film heterostructures provide sub-wavelength acoustic confinement, making them attractive for compact nonlinear phononic systems with applications including frequency conversion, parametric interactions, and nonlinear signal processing. Here, we investigate guided surface acoustic wave phononic four-wave mixing at gigahertz frequencies in an aluminum scandium nitride (Al0.58Sc0.42N)/4H–silicon carbide heterostructure operated at both room temperature (295 K) and cryogenic temperature (4 K). The 500-nm thick aluminum scandium nitride film supports guided Rayleigh and Sezawa modes with distinct displacement and strain energy density distributions, allowing a direct comparison of mode-dependent nonlinear behavior within the same device. Continuous-wave four-wave mixing measurements reveal an enhancement in the extracted modal nonlinear coefficient at 4 K relative to 295 K for both modes. In addition, the Rayleigh mode exhibits a modal nonlinearity approximately two orders of magnitude larger than that of the Sezawa mode across both temperature regimes. These results demonstrate that phononic four-wave mixing is strongly influenced by temperature, mode confinement, and strain localization while establishing aluminum scandium nitride on silicon carbide heterostructures as a promising platform for engineering enhanced nonlinear phononic interactions for future classical and quantum acoustic on-chip signal processing systems.

Article Details

Volume / Issue Vol. 128, Issue 22
Published June 01, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (12)

A

A. K. Behera

Center for Integrated Nanotechnologies, Sandia National Laboratories 1 , Albuquerque, New Mexico 87185,

B

B. Smith

Microsystems Engineering, Science, and Applications, Sandia National Laboratories 2 , Albuquerque, New Mexico 87123,

X

X. Du

Department of Electrical and Systems Engineering, University of Pennsylvania 3 , Philadelphia, Pennsylvania 19104,

Y

Y. Deng

M

M. Miller

Microsystems Engineering, Science, and Applications, Sandia National Laboratories 2 , Albuquerque, New Mexico 87123,

N

N. Sagartz

Microsystems Engineering, Science, and Applications, Sandia National Laboratories 2 , Albuquerque, New Mexico 87123,

M

M. Koppa

Microsystems Engineering, Science, and Applications, Sandia National Laboratories 2 , Albuquerque, New Mexico 87123,

C

C. T. Harris

Center for Integrated Nanotechnologies, Sandia National Laboratories 1 , Albuquerque, New Mexico 87185,

M

M. Lilly

Center for Integrated Nanotechnologies, Sandia National Laboratories 1 , Albuquerque, New Mexico 87185,

R

R. H. Olsson

Department of Electrical and Systems Engineering, University of Pennsylvania 3 , Philadelphia, Pennsylvania 19104,

M

M. Eichenfield

Center for Integrated Nanotechnologies, Sandia National Laboratories 1 , Albuquerque, New Mexico 87185,

L

L. Hackett

Microsystems Engineering, Science, and Applications, Sandia National Laboratories 2 , Albuquerque, New Mexico 87123,