Cross-modal neuromorphic computing in GdFeCo devices by spin–orbit torque induced field-free magnetization switching

H Huiyun Hu T Tao Zhu (Zhejiang Key Laboratory of Precise Synthesis of Functional Molecules, Department of Chemistry, School of Science and Research Center for Industries of the Future, Westlake University, 600 Dunyu Road, Hangzhou 310030, Zhejiang Province, P. R. China) L Likun Qian (School of Future Technology, China University of Geosciences 1 , Wuhan 430074,) B Buyun Huang (School of Mechanical and Electronic Engineering, East China University of Technology 4 , Nanchang 330013,) K Ke Wang (Tianjin Medical University Cancer Institute and Hospital Tianjin China) L Liu Yang F Fang Jin K Kaifeng Dong (Hubei Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems 2 , Wuhan 430074,)

Abstract

Field-free spin–orbit torque (SOT)-driven perpendicular magnetization switching presents a highly promising pathway for neuromorphic computing applications. In this study, field-free SOT switching is achieved in a GdFeCo device driven by out-of-plane spin polarization. The anomalous Hall effect loop shifts combined with energy-dispersive spectroscopy analysis confirm that the switching mechanism originates from an out-of-plane spin polarization component (σz), generated by a compositional gradient of Gd. Subsequently, a fully spin-based generative adversarial network architecture utilizing GdFeCo SOT devices is built. By exploiting the tunable neuronal and synaptic characteristics of GdFeCo-SOT systems, we achieve cross-modal learning between image and speech domains. A remarkable recognition accuracy rate of above 80% is attained when the generated speech is assessed. Our work introduces a field-free SOT switching strategy based on out-of-plane spin-polarized components, offering significant potential for implementation in neuromorphic computing.

Article Details

Volume / Issue Vol. 127, Issue 26
Published December 29, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

H

Huiyun Hu

T

Tao Zhu

Zhejiang Key Laboratory of Precise Synthesis of Functional Molecules, Department of Chemistry, School of Science and Research Center for Industries of the Future, Westlake University, 600 Dunyu Road, Hangzhou 310030, Zhejiang Province, P. R. China

L

Likun Qian

School of Future Technology, China University of Geosciences 1 , Wuhan 430074,

B

Buyun Huang

School of Mechanical and Electronic Engineering, East China University of Technology 4 , Nanchang 330013,

K

Ke Wang

Tianjin Medical University Cancer Institute and Hospital Tianjin China

L

Liu Yang

F

Fang Jin

K

Kaifeng Dong

Hubei Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems 2 , Wuhan 430074,