Correlation between microstructural changes and phonon shifts in O−-implanted FeS2 thin films

Abstract

This work systematically studies microstructural modifications in FeS2 thin films induced by low-energy oxygen implantation at different fluences. Crystallite size was determined from x-ray diffraction (XRD), while phonon shifts in the Ag Raman vibrational mode were analyzed for all samples. A clear correlation was established between Raman shift, crystallite size, and ion fluence. This approach highlights Raman scattering as a rapid, nondestructive, and complementary alternative to XRD, with significant implications for in situ monitoring of implantation processes. The results provide a robust foundation for linking implantation parameters to structural evolution and phonon behavior of ion-implanted FeS2 thin films.