Contrasting properties of free carriers in <i>n</i> - and <i>p</i> -type Sb2Se3
Abstract
We report persistent photoconductivity in p-type Sb2Se3 single crystals doped with Cd or Zn, where enhanced conductivity remains for hours after illumination ceases at temperatures below ∼25 K. Comparative transport and infrared absorption measurements, including on n-type Cl-doped counterparts, reveal strong indications that hole transport in Sb2Se3 is more strongly affected by intrinsic carrier scattering than electron transport. These results point to a fundamental asymmetry in charge carrier dynamics and highlight the potential role of polaronic effects in limiting hole mobility in this quasi-one-dimensional semiconductor.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (6)
F. Herklotz
TU Dresden University of Technology, Institute of Applied Physics 1 , 01062 Dresden,
E. V. Lavrov
TU Dresden University of Technology, Institute of Applied Physics 1 , 01062 Dresden,
T. D. C. Hobson
Stephenson Institute for Renewable Energy, University of Liverpool 2 , Liverpool L69 7ZF,
T. P. Shalvey
Stephenson Institute for Renewable Energy, University of Liverpool 2 , Liverpool L69 7ZF,
J. D. Major
Stephenson Institute for Renewable Energy, University of Liverpool 2 , Liverpool L69 7ZF,
K. Durose
Stephenson Institute for Renewable Energy, University of Liverpool 2 , Liverpool L69 7ZF,