Conductivity decay in freshly fabricated TFB films

L Lihao Liu H Hui Bao (MIIT Key Laboratory for Low Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology 1 , Beijing 100081,) M Mingda Zhang H Honghe Yao (MIIT Key Laboratory for Low Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology 1 , Beijing 100081,) M Min Yang P Peng Huang K Kai Gu (Chemical Physics Theory Group, Department of Chemistry, University of Toronto , Toronto, Ontario M5S 3H6,) C Cheng Zhu (School of Interdisciplinary Sciences, State Key Laboratory of Environment Characteristics and Effects for Near-Space) Y Yuanping Yi (Beijing National Laboratory for Molecular Sciences, CAS Center of Excellence in Molecular Science) H Haizheng Zhong

Abstract

Understanding the hole transport layers is fundamental to improve the stability of quantum-dot light-emitting diodes. This study investigates the short-term conductivity decay of freshly fabricated poly(9,9-dioctylfluorene-co-N-(4-(3-methylpropyl))diphenylamine) (TFB) films under applied voltage. In addition, the conductivity decay of freshly prepared TFB films can be partially recovered after short-term storage. The phenomenon is also observed in other hole transporting materials, such as PVK and PF8Cz. The decay dynamics can be described using the Kohlrausch–Williams–Watts stretched-exponential function. The temperature-dependent relaxation time extracted from the decay curves obeys an Arrhenius law, yielding an activation energy of 0.18 ± 0.03 eV. This value is in good agreement with the calculated reorganization energy associated with the hopping transport of charge carriers. Based on the results, conductivity decay of freshly fabricated TFB films during the initial short-term period can be explained by the coupling between electric field-induced polarization and carrier transport (denoted as polarization–conduction coupling).

Article Details

Volume / Issue Vol. 128, Issue 6
Published February 09, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

L

Lihao Liu

H

Hui Bao

MIIT Key Laboratory for Low Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology 1 , Beijing 100081,

M

Mingda Zhang

H

Honghe Yao

MIIT Key Laboratory for Low Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology 1 , Beijing 100081,

M

Min Yang

P

Peng Huang

K

Kai Gu

Chemical Physics Theory Group, Department of Chemistry, University of Toronto , Toronto, Ontario M5S 3H6,

C

Cheng Zhu

School of Interdisciplinary Sciences, State Key Laboratory of Environment Characteristics and Effects for Near-Space

Y

Yuanping Yi

Beijing National Laboratory for Molecular Sciences, CAS Center of Excellence in Molecular Science

H

Haizheng Zhong