Compact radio frequency module for gate-defined quantum dot qubits

Z Zhiyuan Wu Z Zheng Zhou (Interdisciplinary Materials Research Center, School of Materials Science and Engineering) X Xuanyue Pan (Key Laboratory for the Physics and Chemistry of Nanodevices and School of Electronics, Peking University , Beijing 100871,) Y Yixin Li (Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), State Key Laboratory of Advanced Chemical Power Sources, College of Chemistry) S Shaoyun Huang (Key Laboratory for the Physics and Chemistry of Nanodevices and School of Electronics, Peking University , Beijing 100871,)

Abstract

Semiconductor quantum dot spin qubits, which employ radio frequency (RF) techniques for manipulation and readout, present a compelling pathway toward scalable quantum computation. We introduce a robust, miniaturized, and modular RF package designed for high-fidelity, low-crosstalk control of quantum dot qubit systems. This design integrates a master board with an interchangeable daughterboard for rapid sample exchange. Its compact footprint (28 × 50 × 12 mm3) is compatible with standard dilution refrigerator stages. The module provides 48 low-pass-filtered DC bias lines, 28 of which support combined RF/DC operation for qubit control. Dedicated RF lines include eight microwave channels with a DC to 6 GHz bandwidth and 20 DC pulse gate lines with a −3 dB cutoff at 3 GHz. A significant feature of this design is the suppression of crosstalk between adjacent microwave lines to <−30 dB (or less than 0.1% signal leakage) from DC to 6 GHz. This is achieved using optimized alternating ground planes and fencing vias. The module directly supports baseband control strategies, thereby mitigating gigahertz-frequency heating effects in high-density qubit arrays.

Article Details

Volume / Issue Vol. 127, Issue 21
Published November 24, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

Z

Zhiyuan Wu

Z

Zheng Zhou

Interdisciplinary Materials Research Center, School of Materials Science and Engineering

X

Xuanyue Pan

Key Laboratory for the Physics and Chemistry of Nanodevices and School of Electronics, Peking University , Beijing 100871,

Y

Yixin Li

Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), State Key Laboratory of Advanced Chemical Power Sources, College of Chemistry

S

Shaoyun Huang

Key Laboratory for the Physics and Chemistry of Nanodevices and School of Electronics, Peking University , Beijing 100871,