Coexistence of intrinsic magnetic topological state and spin-polarized nontrivial flatband in the honeycomb-kagome monolayers <i>X</i>2Rb3 (<i>X</i>=Cr, Mo, W)

J Jiashuo Liang (Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science) H Hongshuang Liu (Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University 1 , Tianjin 300354,) B Bo Wang Z Zeying Zhang (Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China) L Liying Wang (Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science)

Abstract

Magnetic materials featuring topology and flatband in their electronic structure bridge the topological quantum physics and strongly correlated many-body physics, but materials that manifest this feature are rare. Here, we predict a class of ideal intrinsic magnetic topological insulators naturally featuring a nontrivial flatband in the two-dimensional (2D) honeycomb-kagome lattices X2Rb3 (X=Cr, Mo, W). In the absence of spin–orbit coupling (SOC), these monolayers are spin-polarized half-semimetals with a twofold degenerate nodal point and a flatband appearing at the Fermi level simultaneously. With SOC included, a significant bandgap (168 meV for W2Rb3) opens up at the band touching point, and the flatband that spans the whole Brillouin zone becomes nontrivial with a nonzero Chern number (C = 1). The topological property calculations verify that X2Rb3 monolayers are intrinsic quantum anomalous Hall effect materials. Due to the similarity to 2D continuum Landau levels, the striking nontrivial flatband in X2Rb3 makes it an ideal platform to investigate the flatband physics, such as the realization of fractional quantum anomalous Hall states in real materials.

Article Details

Volume / Issue Vol. 126, Issue 13
Published March 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

J

Jiashuo Liang

Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science

H

Hongshuang Liu

Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University 1 , Tianjin 300354,

B

Bo Wang

Z

Zeying Zhang

Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China

L

Liying Wang

Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science