Charge-density wave-mediated soft phonon modes suppress the temperature dependence of lattice thermal conductivity in 2H-NbSe2

J Jinfeng Yang (Department of Engineering) Z Zhunyun Tang (School of Physics and Optoelectronics and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University 2 , Xiangtan 411105, Hunan,) Y Yongze Xu (School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology Shenzhen 1 , Shenzhen 518055,) X Xiaonan Wang T Tao Ouyang H Huarui Sun (School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology Shenzhen 1 , Shenzhen 518055,)

Abstract

Layered NbSe2 has attracted extensive interest as a prototypical system where multiband superconductivity coexists with a charge-density wave (CDW) order. Here, using self-consistent phonon theory to incorporate anharmonic renormalization, CDW critical temperatures in the bulk and monolayer 2H-NbSe2 are calculated to be 66 and 116 K, respectively, in good agreement with reported experiments. First-principles anharmonic lattice dynamics combined with Peierls–Boltzmann transport theory reveals that strong phonon anharmonicity, arising from low-energy special soft phonon modes mediated by the CDW behavior, results in a low lattice thermal conductivity (κL) with weak temperature dependence. Strikingly, four-phonon (4ph) interactions contribute to a dramatic suppression of κL, particularly in the in-plane direction, reinforcing the critical role of strong phonon anharmonicity. These results provide a detailed microscopic understanding of CDW transition and thermal transport in CDW materials.

Article Details

Volume / Issue Vol. 128, Issue 10
Published March 09, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

J

Jinfeng Yang

Department of Engineering

Z

Zhunyun Tang

School of Physics and Optoelectronics and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University 2 , Xiangtan 411105, Hunan,

Y

Yongze Xu

School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology Shenzhen 1 , Shenzhen 518055,

X

Xiaonan Wang

T

Tao Ouyang

H

Huarui Sun

School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology Shenzhen 1 , Shenzhen 518055,