Charge balance effect on the phase stability and reliability in doped HfO2-ZrO2 superlattice films for further DRAM capacitors: A first-principles study
Abstract
A dielectric material with a higher permittivity and a lower leakage is required to meet the demands of three-dimensional (3D) dynamic random access memory (DRAM). Current morphotropic phase boundary (MPB) behavior exhibits a higher permittivity but relatively high leakage. In this work, we propose a feasible approach to achieve MPB and low leakage by the charge balance effect in the doped HfO2-ZrO2 superlattice system. Our first-principles calculations reveal that the synergy effect of doping and oxygen vacancies can achieve lower phase transition barriers between polar and nonpolar phases, suggesting the formation of more MPB regions. Especially for Y dopant, it is more preferred due to the smallest transition barrier. Additionally, defect states arising from oxygen vacancies can be passivized at the charge balance state to enable large bandgap, suppressing leakage currents. This work provides a potential solution for a dielectric material with a higher permittivity and a lower leakage, paving the way for future 3D DRAM capacitors.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (18)
Ting Zhang
Maokun Wu
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University 1 , Shanghai 200240,
Miaojia Yuan
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University 1 , Shanghai 200240,
Yichen Wen
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University 1 , Shanghai 200240,
Yilin Hu
Department of Molecular Biology and Biochemistry University of California Irvine California USA
Xuepei Wang
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University 1 , Shanghai 200240,
Boyao Cui
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University 1 , Shanghai 200240,
Jinhao Liu
Yishan Wu
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University 1 , Shanghai 200240,
Hong Dong
Feng Lu
Department of Medical Oncology, Dana-Farber Cancer Institute
Wei-Hua Wang
Pengpeng Ren
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University 1 , Shanghai 200240,
Sheng Ye
School of Artificial Intelligence
Hong-Liang Lu
School of Microelectronics, College of Integrated Circuits and Micro-Nano Electronics, Fudan University 1 , Shanghai 200433, ; , Shanghai 201203, ; , Jiaxing, Zhejiang Province 314100,
Runsheng Wang
Zhigang Ji
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University 1 , Shanghai 200240,
Ru Huang
New Cornerstone Science Laboratory, Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, China.