Characterization of leakage errors in a transmon qubit due to resonant digital control

M M. A. Castellanos-Beltran (National Institute of Standards and Technology 2 , Boulder, Colorado 80305,) A A. J. Sirois (National Institute of Standards and Technology 1 , Boulder, Colorado 80305,) D D. I. Olaya (National Institute of Standards and Technology 1 , Boulder, Colorado 80305,) J J. Biesecker (National Institute of Standards and Technology 1 , Boulder, Colorado 80305,) S S. P. Benz (National Institute of Standards and Technology 1 , Boulder, Colorado 80305,) P P. F. Hopkins (National Institute of Standards and Technology 1 , Boulder, Colorado 80305,)

Abstract

We present experimental measurements and analysis of leakage errors occurring during resonant digital control of a superconducting qubit. By increasing the amplitude of the digital pulse trains and therefore decreasing the duration of the control gates, from 100 to 40 ns for a π-gate, the leakage error rate measured per Clifford gate in a randomized benchmarking test increases from 4.3×10−4 to 2.4×10−3 and becomes the dominant source of single-qubit gate errors for our qubit; these error rates are 1–2 orders of magnitude larger than we measure when controlling the same qubit using traditional, shaped-analog signals. Simulations show the dominant leakage mechanism arises from the increased spectral power of the pulse trains at the frequency ω12 corresponding to excitations from the first excited state |1⟩ to the second excited state |2⟩. Our measurements demonstrate the fundamental limits to resonant digital control of low-anharmonicity qubits and outline the trade-off between reducing gate times while preserving gate fidelity. We discuss possible strategies for mitigating this issue in future digital control implementations.

Article Details

Volume / Issue Vol. 127, Issue 23
Published December 08, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

M

M. A. Castellanos-Beltran

National Institute of Standards and Technology 2 , Boulder, Colorado 80305,

A

A. J. Sirois

National Institute of Standards and Technology 1 , Boulder, Colorado 80305,

D

D. I. Olaya

National Institute of Standards and Technology 1 , Boulder, Colorado 80305,

J

J. Biesecker

National Institute of Standards and Technology 1 , Boulder, Colorado 80305,

S

S. P. Benz

National Institute of Standards and Technology 1 , Boulder, Colorado 80305,

P

P. F. Hopkins

National Institute of Standards and Technology 1 , Boulder, Colorado 80305,