Carrier recombination in MBE grown InGa0.2AsSb0.27 and InAsSb0.09 alloys lattice-matched to GaSb for mid-wave infrared device applications
Abstract
This study presents the molecular beam epitaxy growth of the indium-rich InGa0.2AsSb0.27 alloy with a 0.26 eV bandgap, lattice-matched (LM) to GaSb. A significant finding is the high material metrics, particularly the minority carrier lifetime (0.3 μs) and the background carrier concentration (8 × 1015 cm−3), in which the product reaches half the value of the reference InAsSb0.09 alloy. This indicates the suitability of indium-rich InGaxAsSby alloys LM to GaSb for low-dark-current, high-quantum-efficiency detectors for the entire mid-wave infrared wavelength range.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (4)
Jingze Zhao
Department of Electrical and Computer Engineering, Stony Brook University , Stony Brook, New York 11794,
Dmitri Donetski
Department of Electrical and Computer Engineering, Stony Brook University , Stony Brook, New York 11794,
Gela Kipshidze
Department of Electrical and Computer Engineering, Stony Brook University , Stony Brook, New York 11794,
Leon Shterengas
Department of Electrical and Computer Engineering, Stony Brook University , Stony Brook, New York 11794,