Bragg-grating engineering enables deterministic resonance control in an on-chip THz filter

B Bingnan Yan X Xu Yan (Department of Orthopaedics and Traumatology) X Xuecou Tu H Hongshan Jing (Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,) C Cheng Liang B Baoran Lai (Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,) Z Zhanzhang Mai (Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,) Y Yunjie Rui (Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,) D Dingxuan Gu (Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,) C Chao Wan Q Qingyuan Zhao L Labao Zhang X Xiaoqing Jia L Lin Kang J Jian Chen P Peiheng Wu

Abstract

On-chip filters are important for integrated terahertz (THz) communication and sensing systems. Deterministic control of resonance multiplicity in compact devices enables flexible spectral filtering. Here, we experimentally demonstrate an on-chip silicon THz filter based on a Bragg-grating-assisted Fabry–Pérot cavity, in which the resonance multiplicity is governed by the relation between the Bragg stopband and the cavity free spectral range (FSR). By engineering this stopband–FSR relation, single-, double-, and triple-resonance states are achieved within the 360–390 GHz band, with a packaged insertion loss of approximately 6 dB. The single-resonance device exhibits a through-port transmission minimum approaching −40 dB and a loaded quality factor of QL = 809.5. This work provides a compact strategy for deterministic spectral-state engineering in integrated THz filters.

Article Details

Volume / Issue Vol. 129, Issue 5
Published August 03, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (16)

B

Bingnan Yan

X

Xu Yan

Department of Orthopaedics and Traumatology

X

Xuecou Tu

H

Hongshan Jing

Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,

C

Cheng Liang

B

Baoran Lai

Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,

Z

Zhanzhang Mai

Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,

Y

Yunjie Rui

Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,

D

Dingxuan Gu

Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,

C

Chao Wan

Q

Qingyuan Zhao

L

Labao Zhang

X

Xiaoqing Jia

L

Lin Kang

J

Jian Chen

P

Peiheng Wu