Bilayer oxide memristor based on IGZO/IAZO structure for artificial tactile perception system

Abstract

Rapid advances in neuromorphic computing and intelligent perception demand electronic devices that faithfully replicate human nociception, which is crucial for achieving human–computer interaction. In this study, a self-limiting and volatile transparent ITO/IGZO/IAZO/ITO memristor with a bilayer structure is designed and prepared. Compared with the traditional single-layer structure (ITO/IAZO/ITO and ITO/IGZO/ITO) devices, the bilayer device exhibits better I–V cycling stability, more focused current response, and narrower distribution of volatile voltage in terms of electrical performance, reflecting improved device consistency and reliability (μ increased by ∼43% and σ increased by ∼57%). The ITO/IGZO/IAZO/ITO memristors are able to effectively mimic the core characteristics of biological nociceptors, including “threshold,” “no adaption,” “relaxation,” and “sensitization of allodynia/hyperalgesia.” By integrating the IGZO/IAZO memristor with a piezoresistive force sensor, a biomimetic nociceptive sensing system is further constructed for responding to external noxious stimuli, which demonstrates the potential of self-protective neuromorphic electronics.