Bidirectional optically modulated In2O3 transistors with inorganic solid electrolyte gating for neuromorphic visual systems

G Guansong Qiu (Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics, Central South University 1 , Changsha, Hunan 410083,) C Chenxing Jin (Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics, Central South University 1 , Changsha, Hunan 410083,) R Ruihan Li W Wanrong Liu Y Yunchao Xu (Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics, Central South University 1 , Changsha, Hunan 410083,) X Xiaofang Shi J Junliang Yang (Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics) J Jia Sun (National Medical Products Administration Key Laboratory for Research and Evaluation of Drug Metabolism and Guangdong Provincial Key Laboratory of New Drug Screening, School of Pharmaceutical Sciences, Southern Medical University)

Abstract

Inspired by retinal visual processing, we demonstrate a bidirectional optically controlled neuromorphic In2O3 transistor based on an inorganic solid electrolyte Li1+xAlxTi2-x(PO4)3 (LATP) gate dielectric. The device exhibits light-controlled bidirectional visual bipolar cell behavior, exhibiting excitatory and inhibitory responses under ultraviolet (275 nm) and green light (520 nm) stimuli, respectively. X-ray photoelectron spectroscopy and capacitance–frequency measurements reveal that mobile Li+ ions in the LATP dielectric layer can adsorb electrons and form Coulombic binding states, thereby dynamically modulating photogenerated carrier transport. Optical pulse trains dynamically regulate the channel current, enabling bidirectional optical neural plasticity. Furthermore, a large-area device array was employed for image encoding and retinal damage simulation, highlighting its potential for artificial vision and neuromorphic computing. These findings establish an effective strategy for developing bidirectional optical, reconfigurable, and large-scale integrable neuromorphic devices, providing additional insights into the role of dielectric layer ion dynamics in neuromorphic optoelectronics.

Article Details

Volume / Issue Vol. 128, Issue 1
Published January 05, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

G

Guansong Qiu

Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics, Central South University 1 , Changsha, Hunan 410083,

C

Chenxing Jin

Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics, Central South University 1 , Changsha, Hunan 410083,

R

Ruihan Li

W

Wanrong Liu

Y

Yunchao Xu

Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics, Central South University 1 , Changsha, Hunan 410083,

X

Xiaofang Shi

J

Junliang Yang

Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics

J

Jia Sun

National Medical Products Administration Key Laboratory for Research and Evaluation of Drug Metabolism and Guangdong Provincial Key Laboratory of New Drug Screening, School of Pharmaceutical Sciences, Southern Medical University