BEOL-compatible Te-TeO<i>x</i> p-FETs with channel length down to 50 nm at cryogenic temperatures
Abstract
In this work, we present p-type Te-TeOx FETs with BEOL-compatibility targeting high-performance computing at cryogenic temperatures. The devices feature aggressively scaled channel lengths (Lch of 50 nm) deposited using the sputtering method that is cost-effective, large-scale manufacturable, and highly controllable. We investigated the effects of oxygen content and film thickness in the sputtered channel layer on device performance. The device achieves a maximum transconductance (Gm, max) of 142 μS/μm, an on/off ratio exceeding 3 × 108, a subthreshold swing (SS) of 99 mV/Dec., a high hole mobility of 28.6 cm2/V s, and excellent NBTI and PBTI reliability characteristics at 77 K.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (9)
Ying Xu
Yiyuan Sun
Zijie Zheng
Yuxuan Wang
Yuye Kang
Department of Electrical and Computer Engineering, National University of Singapore , 117576
Kaizhen Han
Department of Electrical and Computer Engineering, National University of Singapore , 117576
Xuanqi Chen
Department of Electrical and Computer Engineering, National University of Singapore , 117576
Gerui Zheng
Department of Electrical and Computer Engineering, National University of Singapore 1 , 117576
Xiao Gong
State Key Laboratory of Silicate Materials for Architectures