Bandgap modulation in self-limited two-dimensional Ga2O3 films via defect engineering
Abstract
We demonstrated the controllable exfoliation of two-dimensional gallium oxide (2D-Ga2O3) thin films via a touch printing process that leverages the self-limiting oxidation behavior of liquid gallium. The resulting films exhibited high thickness uniformity and surface smoothness. After annealing at 800 °C for 1 h, the film thickness was reduced from 6.8 to 3.9 nm due to recrystallization. Furthermore, by precisely modulating the annealing parameters, we introduced point defects and promoted the formation of a Ga–Si–O solid solution, enabling continuous bandgap tunability within the range of 4.88–7.22 eV. This work establishes a clear correlation among annealing, defect evolution, and band structure modulation.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (9)
Moyu Wei
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Yunkai Li
Yicheng Pei
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Yuyang Wang
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University
Hanyu Zhao
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Chenlin Ai
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Han Kong
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Guoguo Yan
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Xingfang Liu