Artificial synapses based on CIPS/Te vdW heterojunction ferroelectric transistor for traffic light recognition

Z Zuyi Wang (School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China, and also with the Guangdong Provincial Key Laboratory of Chip and Integration Technology 1 , Guangzhou 510631,) F Fei Li Y Yiming Zhao (Department of Medical Oncology, Sun Yat-Sen Memorial Hospital, Sun Yat-Sen University) Z Zhen Wang Y Yuhan Zhang (Department of Chemistry) G Guoxin Liu J Jing Wang (Hunan Cancer Hospital Changsha China) Y Yifan Zhang X Xinyi Chen W Wei Gao M Mengmeng Yang N Nengjie Huo W Weidong Song Y Yiming Sun

Abstract

Neuromorphic computing is a key technology for simulating brain function and plays a crucial role in the next-generation computing, offering a potential solution to the challenges posed by the von Neumann bottleneck. Tellurium (Te) and CuInP2S6 (CIPS), as two-dimensional (2D) materials with excellent properties, have been widely used in advanced electronics and optoelectronics. However, the combination of the stable ferroelectricity of CIPS and the high current characteristics of Te, which both electrical and optical stimuli can modulate, offers great potential for addressing complex application scenarios, yet this type of 2D van der Waals (vdW) device has been largely unexplored. In this study, we developed an optoelectronic neuromorphic device based on CIPS and Te, which exhibits fundamental synaptic behaviors in response to electrical stimulation and demonstrates different current responses under light of varying wavelengths. Additionally, we constructed an RC system based on this device to address the problem of traffic light recognition. In this system, the ferroelectric modulation of CIPS by voltage enables short-term depression (STD) to simulate human braking behavior in response to dangerous signals. This approach effectively enhances the response capabilities of intelligent traffic systems to traffic signals, offering significant application potential.

Article Details

Volume / Issue Vol. 126, Issue 21
Published May 26, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (14)

Z

Zuyi Wang

School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China, and also with the Guangdong Provincial Key Laboratory of Chip and Integration Technology 1 , Guangzhou 510631,

F

Fei Li

Y

Yiming Zhao

Department of Medical Oncology, Sun Yat-Sen Memorial Hospital, Sun Yat-Sen University

Z

Zhen Wang

Y

Yuhan Zhang

Department of Chemistry

G

Guoxin Liu

J

Jing Wang

Hunan Cancer Hospital Changsha China

Y

Yifan Zhang

X

Xinyi Chen

W

Wei Gao

M

Mengmeng Yang

N

Nengjie Huo

W

Weidong Song

Y

Yiming Sun