Antiferromagnetic ordering enhanced magnetic damping in Mn2Au/CoFeB bilayers

D Donghang Xie (State Key Laboratory of Spintronics, Nanjing University 1 , Suzhou 215163,) H Haozhe Wang (Department of Chemistry) Z Zhe Zhang Z Zishuang Li (State Key Laboratory of Spintronics, Nanjing University 1 , Suzhou 215163,) J Jiahua Lu (State Key Laboratory of Spintronics, Nanjing University 1 , Suzhou 215163,) R Ronghua Liu J Jun Du (State Key Laboratory of Chemical Reaction Dynamics, Dalian Institute of Chemical Physics) Y Yu Yan L Liang He (School of Mechanical Engineering, State Key Laboratory of Intelligent Construction and Healthy Operation and Maintenance of Deep Underground Engineering) J Jing Wu R Rong Zhang (Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, China) B Bo Liu T Tiejun Zhou Y Yongbing Xu (National Key Laboratory of Spintronics, Nanjing University) X Xuezhong Ruan

Abstract

Antiferromagnets (AFMs) hold significant potential for spintronic devices owing to their insensitivity to external magnetic fields and the absence of stray fields. Beyond these inherent advantages, an AFM can manipulate the magnetic dynamics of a ferromagnet (FM) layer in AFM/FM bilayers, whereas the mechanism of such manipulation remains controversial. Here, we investigate the magnetic dynamics of AFM/FM Mn2Au/CoFeB bilayers via ferromagnetic resonance (FMR). It is found that the Néel temperature of 2-nm-thick Mn2Au is as low as 40 K, in sharp contrast to that of bulk Mn2Au, which exceeds 1000 K. In the Mn2Au(2 nm)/CoFeB(4 nm) bilayer, the magnetic damping α of the CoFeB layer increases from 0.013 to 0.047 as temperature decreases from 160 to 10 K, accompanied by a synchronous increase in the exchange coupling field Hrot. Such an increase in α is attributed to the enhanced spin angular momentum transfer from CoFeB to Mn2Au, mediated through AFM–FM exchange coupling between Mn2Au and CoFeB, which is enhanced by the Mn2Au antiferromagnetic ordering as the temperature decreases. Our study provides deeper insights into AFM/FM dynamics and spintronic storage technology.

Article Details

Volume / Issue Vol. 129, Issue 2
Published July 13, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (15)

D

Donghang Xie

State Key Laboratory of Spintronics, Nanjing University 1 , Suzhou 215163,

H

Haozhe Wang

Department of Chemistry

Z

Zhe Zhang

Z

Zishuang Li

State Key Laboratory of Spintronics, Nanjing University 1 , Suzhou 215163,

J

Jiahua Lu

State Key Laboratory of Spintronics, Nanjing University 1 , Suzhou 215163,

R

Ronghua Liu

J

Jun Du

State Key Laboratory of Chemical Reaction Dynamics, Dalian Institute of Chemical Physics

Y

Yu Yan

L

Liang He

School of Mechanical Engineering, State Key Laboratory of Intelligent Construction and Healthy Operation and Maintenance of Deep Underground Engineering

J

Jing Wu

R

Rong Zhang

Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, China

B

Bo Liu

T

Tiejun Zhou

Y

Yongbing Xu

National Key Laboratory of Spintronics, Nanjing University

X

Xuezhong Ruan