Anomalous valley Hall effect in two-dimensional multiferroic V2N2O semiconductor
Abstract
Intrinsic ferromagnetism, with coexisting ferroelectric and ferrovalley polarizations in a single two-dimensional semiconductor, is highly desirable for developing next-generation multifunctional nanospintronic devices. Based on first-principles calculations and Monte Carlo simulations, the two-dimensional V2N2O monolayer is predicted to be an indirect bandgap ferromagnetic semiconductor, characterized by a near-room-temperature Curie temperature and an out-of-plane easily magnetized axis. Interestingly, the spontaneous valley polarization can be effectively modulated by the ferroelectric polarization. Remarkably, the anomalous valley Hall effect in the V2N2O monolayer can be controlled by reversing the magnetization. Thus, the V2N2O monolayer is considered a potential candidate for polymorphic memory and multifunctional valley electronic devices.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (8)
Caijia Sun
School of Materials and Physics, China University of Mining and Technology 1 , Xuzhou 221116,
Yiyu Sun
School of Materials and Physics, China University of Mining and Technology 1 , Xuzhou 221116,
Haoshen Ye
Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University 2 , Nanjing 211189,
Yijie Zhu
National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093,
Leiming Chen
Henan Key Laboratory of Aeronautical Materials and Application Technology
Huichao Li
School of Materials and Physics, China University of Mining and Technology 1 , Xuzhou 221116,
G. P. Zhang
Department of Physics, Indiana State University 3 , Terre Haute, Indiana 47809,
Jianli Wang