Anomalous Nernst and Hall effects in Cr-doped MnSb thin films

Abstract

The anomalous Nernst effect (ANE) has attracted extensive attention from both academia and industry owing to its unique thermoelectric physics and outstanding application potential. This study investigated the ANE and anomalous Hall effect in Cr-doped MnSb thin films deposited on MgO (100) substrates by varying the Cr content. All samples were deposited at 250 °C by employing the radio frequency sputtering process. The experimental results reveal that increasing the Cr content substantially enhanced both the ANE magnitude and the Nernst angle (θANE) by up to 3.5 times and more than five times, respectively. Furthermore, the transverse thermoelectric conductivity (αyx) and Hall conductivity (σyx) improved, while the longitudinal electrical resistivity (ρxx) decreased. Additionally, the sign of the normal Hall effect signal in MnSb thin films was found to be governed by the presence or absence of Cr doping. This study emphasizes the effectiveness of doping engineering as a viable pathway for tuning transverse thermoelectric responses in ferromagnetic systems.