Anomalous Hall transport in Mn3Sn0.5X0.5C (X = Ge and Zn)

Abstract

Mn-based antiperovskites that exhibit topological surface states show potential applications in spintronics, magnetoelectronics, and quantum devices owing to the interplay of magnetism and topological properties. In this family of compounds, Mn3SnC has a concurrent ferromagnetic (FM)/antiferromagnetic (AFM) ground state below T ∼ 285 K, along with the Berry curvature-driven anomalous Hall effect (AHE). Here, we present AHE in Ge- and Zn-doped Mn3SnC compounds: Mn3Sn0.5Ge0.5C (MSGC) and Mn3Sn0.5Zn0.5C (MSZC). MSGC undergoes paramagnetic (PM) to a concurrent AFM/FM transition at TC ∼ 300 K, whereas MSZC exhibits a PM to FM transition at TC ∼ 240 K, followed by an FM to ferrimagnetic transition at TN ∼ 170 K. The electronic transport in these compounds is influenced by the electron–phonon and electron–magnon scatterings and exhibits anomalous Hall resistivity (ρxyA). Our study suggests that AHE in these compounds arises due to skew scattering and intrinsic Berry curvature mechanisms, and electron–phonon and electron–magnon scattering play an important role in skew scattering at high temperature. The doping of Mn3SnC with Ge and Zn atoms notably enhances the value of its anomalous Hall conductivity.