Anisotropy of lattice vibrations and optoelectronic properties in layered KGaS2 single crystal

J Jianan Li X Xue Chen C Canhui Pan (Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Multifunctional Ionic Electronic Materials and Devices, College of Physics and Electronics, Hunan Normal University , Changsha 410081, Hunan,) K Kexin Chen J Junhao Huang (Beijing Frontier Research Center for Biological Structures, State Key Laboratory of Membrane Biology, Tsinghua-Peking Joint Center for Life Sciences, School of Life Sciences, Tsinghua University, Beijing, China.) X Xuanmao Xu (Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Multifunctional Ionic Electronic Materials and Devices, College of Physics and Electronics, Hunan Normal University , Changsha 410081, Hunan,) J Jifei Wang (Key Laboratory of Low‐Dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics Hunan Normal University Changsha 410081 P.R. China) W Weike Wang D Dongsheng Tang (Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Multifunctional Ionic Electronic Materials and Devices, College of Physics and Electronics, Hunan Normal University , Changsha 410081, Hunan,)

Abstract

Low-dimensional materials have the potential for application in polarization-sensitive optoelectronic devices. In this work, we systematically investigated the lattice vibration and photoelectric properties of low-symmetry KGaS2 single crystals. The temperature-dependent Raman spectroscopy revealed the linear dependence of Raman modes on temperatures. The first-order temperature coefficient (χ) of the KGaS2 Raman mode ranges from −0.006 95 to −0.031 09 cm−1/K. Angle-resolved polarized Raman spectroscopy demonstrates the anisotropy of lattice vibrations. Interestingly, KGaS2 exhibits anisotropic transport behavior with a conductance ratio of 6.5 and a photocurrent ratio of about 1.6. The results demonstrate that KGaS2 is a promising candidate material for fabricating polarization-sensitive photodetectors and ignite future research interest in layered AIBIIIQ2VI compounds.

Article Details

Volume / Issue Vol. 128, Issue 19
Published May 11, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

J

Jianan Li

X

Xue Chen

C

Canhui Pan

Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Multifunctional Ionic Electronic Materials and Devices, College of Physics and Electronics, Hunan Normal University , Changsha 410081, Hunan,

K

Kexin Chen

J

Junhao Huang

Beijing Frontier Research Center for Biological Structures, State Key Laboratory of Membrane Biology, Tsinghua-Peking Joint Center for Life Sciences, School of Life Sciences, Tsinghua University, Beijing, China.

X

Xuanmao Xu

Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Multifunctional Ionic Electronic Materials and Devices, College of Physics and Electronics, Hunan Normal University , Changsha 410081, Hunan,

J

Jifei Wang

Key Laboratory of Low‐Dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics Hunan Normal University Changsha 410081 P.R. China

W

Weike Wang

D

Dongsheng Tang

Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Multifunctional Ionic Electronic Materials and Devices, College of Physics and Electronics, Hunan Normal University , Changsha 410081, Hunan,