Anisotropic magnetic damping and spin–orbit torque in epitaxial FeV heterostructures

Y Yangping Wang (Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University 1 , Shanghai 200241,) C Chenyu Zhang Z Ze Yan (State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology) C Cuimei Cao (School of Optical and Electronic Information, Huazhong University of Science and Technology 4 , Wuhan 430074,) M Mingfang Zhang S Shiwei Chen J Junpeng Pan (Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University 1 , Shanghai 200241,) Y Yingying Lu Y Yong Hu Y Yang Xu Q Qingfeng Zhan (Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University 4 , Shanghai 200241,)

Abstract

We investigated the anisotropy of magnetic damping and spin–orbit torque (SOT) in epitaxial Fe77V23/amorphous Al and fully epitaxial Fe77V23/Pt bilayers grown on MgO(001) substrates using ferromagnetic (FM) resonance and harmonic Hall measurements. The magnetic damping of the epitaxial FeV film is revealed to be anisotropic in the FeV/Al bilayer without any spin sink, which is confirmed by the spin-pumping effect in the FeV/Pt bilayers with spin sink. The spin transport between the FeV layer with anisotropic magnetic damping and the Pt layer is anisotropic, which demonstrates by the measurement of the anisotropic SOT efficiency. The anisotropic magnetic damping and SOT can be attributed to the variation of the spin–orbit coupling in different crystallographic directions of the FeV film. These results provide insights and effective pathways for constructing anisotropic charge-to-spin conversion systems based on ferromagnetic materials with anisotropic magnetic damping.

Article Details

Volume / Issue Vol. 127, Issue 11
Published September 15, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (11)

Y

Yangping Wang

Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University 1 , Shanghai 200241,

C

Chenyu Zhang

Z

Ze Yan

State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology

C

Cuimei Cao

School of Optical and Electronic Information, Huazhong University of Science and Technology 4 , Wuhan 430074,

M

Mingfang Zhang

S

Shiwei Chen

J

Junpeng Pan

Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University 1 , Shanghai 200241,

Y

Yingying Lu

Y

Yong Hu

Y

Yang Xu

Q

Qingfeng Zhan

Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University 4 , Shanghai 200241,