Anderson localization of electrons in high Fe-doped transition metal dichalcogenide 1T-Fe0.4Ta0.6Se2 single crystals

A Anni Hu (College of Materials and Environmental Engineering, Hangzhou Dianzi University 1 , Hangzhou 310018,) L Li Shen J Jingying Peng (Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronics, Xiangtan University 2 , Xiangtan 411105,) R Rui Li Y Ye Chen H Haiou Wang (College of Materials and Environmental Engineering, Hangzhou Dianzi University 1 , Hangzhou 310018,) C Chao Cao Y Yu Liu L Lin Yang

Abstract

We report the synthesis of 1T-Fe0.4Ta0.6Se2 single crystal along with its magnetic and transport properties. Magnetic susceptibility and magnetization measurements reveal anisotropic behavior with no long-range magnetic order down to 1.8 K. Low-temperature transport measurements exhibit a three-dimensional variable-range hopping regime, indicative of the localization of electronic states at the Fermi level. These observations shed light on the complex physical properties of the 1T-TaX2 (X = S, Se) family, especially the electronic properties tuned by 3d element doping for potential applications.

Article Details

Volume / Issue Vol. 127, Issue 23
Published December 08, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

A

Anni Hu

College of Materials and Environmental Engineering, Hangzhou Dianzi University 1 , Hangzhou 310018,

L

Li Shen

J

Jingying Peng

Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronics, Xiangtan University 2 , Xiangtan 411105,

R

Rui Li

Y

Ye Chen

H

Haiou Wang

College of Materials and Environmental Engineering, Hangzhou Dianzi University 1 , Hangzhou 310018,

C

Chao Cao

Y

Yu Liu

L

Lin Yang