An electrically driven terahertz metamaterial PIN modulator
Abstract
A terahertz (THz) amplitude modulator based on a silicon p–i–n structure integrated with a planar metamaterial grating is experimentally demonstrated for free-space operation. Electrical modulation is achieved via bulk injection of nonequilibrium carriers into high-resistivity silicon, resulting in enhanced absorption of terahertz radiation in resonant modes of the structure. Owing to strong electromagnetic field confinement, a modulation depth of up to 26.7 dB is achieved. Time-resolved measurements reveal a switching time of 5.8 μs, governed by carrier recombination dynamics in the silicon bulk. The demonstrated modulator provides an efficient and CMOS-compatible solution for terahertz communication and imaging systems.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (7)
A. A. Titenko
Osipyan Institute of Solid State Physics, Russian Academy of Sciences 1 , Chernogolovka 142432,
V. D. Bobova
Osipyan Institute of Solid State Physics, Russian Academy of Sciences 1 , Chernogolovka 142432,
M. S. Sokolova
Osipyan Institute of Solid State Physics, Russian Academy of Sciences 1 , Chernogolovka 142432,
S. M. Makarovskaya
Osipyan Institute of Solid State Physics, Russian Academy of Sciences 1 , Chernogolovka 142432,
V. V. Solovyev
Osipyan Institute of Solid State Physics, Russian Academy of Sciences 1 , Chernogolovka 142432,
I. V. Kukushkin
Osipyan Institute of Solid State Physics, Russian Academy of Sciences 1 , Chernogolovka 142432,
V. M. Muravev
Osipyan Institute of Solid State Physics, Russian Academy of Sciences 1 , Chernogolovka 142432,