AlScN as an electron blocking layer in blue light emitting diodes: A first look

P Pierce Lonergan (School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,) M Madhav Ramesh (School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,) S Shivali Agrawal (R.F. Smith School of Chemical and Biomolecular Engineering, Cornell University 2 , Ithaca, New York 14853,) D Debaditya Bhattacharya (School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,) T Thai-Son Nguyen (Department of Materials Science and Engineering, Cornell University 2 , Ithaca, New York 14853,) V Vladimir Protasenko (School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,) H Henryk Turski (Institute of High Pressure Physics, Polish Academy of Sciences 4 , Sokołowska 29/37, Warsaw 01-142,) H Huili Grace Xing (Institute of Materials and Systems for Sustainability, Nagoya University 1 , Nagoya 464-8601,) D Debdeep Jena (School of Electrical and Computer Engineering, Cornell University 2 , Ithaca, New York 14853,)

Abstract

Electron blocking layers (EBLs) are instrumental in visible light emitters based on nitride semiconductor heterostructures. AlScN (a) can be lattice-matched to GaN, (b) can be grown at GaN compatible conditions, and (c) offers favorable band offsets required for EBLs, but has not been used in light emitting devices to date. In this work, we test if lattice-matched AlScN can be integrated as an EBL layer in a blue light emitting diode (LED) pn junction heterostructure. We find that blue LED operation with peak electroluminescence (EL) at ∼460 nm can indeed be realized with an AlScN EBL. In the LED with the AlScN EBL, we observe low reverse leakage current density, and ∼6 nm lower full-width at half maximum of the EL peak compared to a control sample. Though the turn-on voltage of the AlScN EBL containing blue LED is high, this demonstration proves its feasibility and provides guidance for improved performance in the future.

Article Details

Volume / Issue Vol. 128, Issue 9
Published March 02, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

P

Pierce Lonergan

School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,

M

Madhav Ramesh

School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,

S

Shivali Agrawal

R.F. Smith School of Chemical and Biomolecular Engineering, Cornell University 2 , Ithaca, New York 14853,

D

Debaditya Bhattacharya

School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,

T

Thai-Son Nguyen

Department of Materials Science and Engineering, Cornell University 2 , Ithaca, New York 14853,

V

Vladimir Protasenko

School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,

H

Henryk Turski

Institute of High Pressure Physics, Polish Academy of Sciences 4 , Sokołowska 29/37, Warsaw 01-142,

H

Huili Grace Xing

Institute of Materials and Systems for Sustainability, Nagoya University 1 , Nagoya 464-8601,

D

Debdeep Jena

School of Electrical and Computer Engineering, Cornell University 2 , Ithaca, New York 14853,