All-optically controlled multifunctional logic gates based on the positive and negative photoresponse of a one-dimensional ZnO/CH3NH3PbBr3 heterostructure

W Wendong Lu X Xiaoxuan Wang Y Yi Ma W Wanyu Wang Z Zhenhua Zhang W Wei Xia (State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology) C Chaoyang Huang (School of Electronic Science and Engineering, Southeast University 5 , Nanjing, 210096, Jiangsu,) F Feifei Qin Z Zengliang Shi (School of Electronic Science and Engineering, Southeast University 2 , Nanjing 211189,) C Chunxiang Xu

Abstract

Optoelectronic logic gates, with high-speed, low-power consumption, and broad bandwidth, have attracted significant attention in high-density information processing applications. It would be more attractive and challenging to carry out multifunctional logic operations in an individual device due to the inherent nature of unidirectional carrier transport. Herein, a transistor-like one-dimensional ZnO/CH3NH3PbBr3 heterostructure is designed for an all-optically controlled logic gate that exhibits wavelength- and power-dependent bipolar photoresponse. Under visible light illumination, the device presents a negative photoresponse, while a transformation from negative to positive photoresponse emerges with increasing ultraviolet irradiation power. Time-resolved photoluminescence spectra demonstrate the carrier dynamics involving defect trapping about the negative-positive photoconductive switching. Based on the bipolar photoresponse, five fundamental logic operations (OR, AND, NOR, NOT, and NAND) are implemented in an individual device, which substantially enhances integration density while reducing power consumption. This work presents an optical sensing-computing integrated architecture for the multifunctional optoelectronic chips and non-Von Neumann intelligent sensors.

Article Details

Volume / Issue Vol. 127, Issue 26
Published December 29, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

W

Wendong Lu

X

Xiaoxuan Wang

Y

Yi Ma

W

Wanyu Wang

Z

Zhenhua Zhang

W

Wei Xia

State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology

C

Chaoyang Huang

School of Electronic Science and Engineering, Southeast University 5 , Nanjing, 210096, Jiangsu,

F

Feifei Qin

Z

Zengliang Shi

School of Electronic Science and Engineering, Southeast University 2 , Nanjing 211189,

C

Chunxiang Xu