All-electrical switching of spin texture in a strain-tunable 2D Janus ferroelectric altermagnet

T Tao Yao (National Synchrotron Radiation Laboratory, State Key Laboratory of Precision and Intelligent Chemistry, School of Nuclear Science and Technology) Q Quan Shen W Wenhu Liao (Department of Physics, Jishou University , Jishou 416000, Hunan,) J Jianing Tan (State Key Laboratory of Chemo and Biosensing College of Chemistry and Chemical Engineering Hunan University Changsha China) J Jiansheng Dong (Department of Physics, Jishou University 1 , Jishou 416000, Hunan,)

Abstract

Altermagnetism (AM), a collinear magnetic phase with momentum-dependent spin splitting, is a promising candidate for strong magnetoelectric coupling. However, realizing direct and tunable coupling between ferroelectricity (FE) and AM within a single two-dimensional (2D) material remains an outstanding challenge. Here, based on first-principles calculations, we identify a distorted phase of monolayer Janus VOClBr as an intrinsic 2D FE-AM. This phase demonstrates robust magnetoelectric coupling, as evidenced by a complete reversal of momentum-space spin polarization upon FE switching and further supported by spin texture analysis and the magneto-optical Kerr effect. Notably, the FE properties are highly strain-tunable: a biaxial compression strain of −4% reduces the FE polarization switching barrier by approximately 87%, whereas a tensile strain of +3% induces a phase transition to an antiferromagnet. Leveraging the lock-in between the electrically controlled spin texture and the magneto-optical Kerr effect signal, we propose a non-volatile, polymorphic spintronic memory device featuring all-electrical writing and optical readout. This work establishes 2D FE-AMs as a versatile platform for coupled ferroic orders and paves the way for voltage-controlled, multifunctional spin-logic devices.

Article Details

Volume / Issue Vol. 128, Issue 12
Published March 23, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

T

Tao Yao

National Synchrotron Radiation Laboratory, State Key Laboratory of Precision and Intelligent Chemistry, School of Nuclear Science and Technology

Q

Quan Shen

W

Wenhu Liao

Department of Physics, Jishou University , Jishou 416000, Hunan,

J

Jianing Tan

State Key Laboratory of Chemo and Biosensing College of Chemistry and Chemical Engineering Hunan University Changsha China

J

Jiansheng Dong

Department of Physics, Jishou University 1 , Jishou 416000, Hunan,