Aggregation modulation of conjugated polymers by carbon dots for optoelectronic synaptic transistors and artificial visual recognition

J Jiangpeng Li B Bingyu Han (School of Chemistry, Xi'an Key Laboratory of Sustainable Energy, Material Chemistry, Engineering Research Center of Energy Storage Materials and Devices, Ministry of Education, Xi'an Jiaotong University 1 , Xi'an, Shaanxi 712046,) X Xian Tang X Xianqiang Xie (Frontier Institute of Science and Technology Xi'an Jiaotong University Xi'an 710054 P. R. China) Z Zechen Liang (Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University 2 , Xi'an, Shaanxi 712046,) J Jingpeng Wu B Bohao Song S Sunying Yang (School of Chemistry, Xi'an Key Laboratory of Sustainable Energy, Material Chemistry, Engineering Research Center of Energy Storage Materials and Devices, Ministry of Education, Xi'an Jiaotong University 1 , Xi'an, Shaanxi 712046,) Z Zirui Wang (State Key Laboratory of Structural Chemistry) G Guanghao Lu (Frontier Institute of Science and Technology) L Laju Bu

Abstract

Developing low-power and highly stable optoelectronic synaptic devices is essential for emulating visual neuromorphic functions. Herein, hydrophobic nitrogen/sulfur-doped carbon quantum dots (N/S-CDs) synthesized via a one-step hydrothermal method effectively promote the enhanced aggregation of conjugated-polymer poly [2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5(2,5-di(thien-2-yl) thieno [3,2-b] thiophene)]. Meanwhile, benefiting from the abundant surface functional groups and defect states of N/S-CDs, the resulting organic optoelectronic synaptic transistor (OOST) exhibits diverse synaptic behaviors, including linear multibit storage capability and wavelength-dependent synaptic plasticity, together with a retention time exceeding 1000 s and a 1.3 × 106Ion/Ioff ratio. Neuromorphic functionalities such as learning and memorizing QR code patterns, decoding encrypted optical signals, and recognizing handwritten digits with 92.58% accuracy are successfully emulated. This work highlights the critical roles of energy-level alignment and defect-mediated charge trapping in N/S-CDs, offering a promising strategy for designing simple, efficient, and stable nonvolatile OOSTs for future artificial visual systems.

Article Details

Volume / Issue Vol. 128, Issue 8
Published February 23, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (11)

J

Jiangpeng Li

B

Bingyu Han

School of Chemistry, Xi'an Key Laboratory of Sustainable Energy, Material Chemistry, Engineering Research Center of Energy Storage Materials and Devices, Ministry of Education, Xi'an Jiaotong University 1 , Xi'an, Shaanxi 712046,

X

Xian Tang

X

Xianqiang Xie

Frontier Institute of Science and Technology Xi'an Jiaotong University Xi'an 710054 P. R. China

Z

Zechen Liang

Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University 2 , Xi'an, Shaanxi 712046,

J

Jingpeng Wu

B

Bohao Song

S

Sunying Yang

School of Chemistry, Xi'an Key Laboratory of Sustainable Energy, Material Chemistry, Engineering Research Center of Energy Storage Materials and Devices, Ministry of Education, Xi'an Jiaotong University 1 , Xi'an, Shaanxi 712046,

Z

Zirui Wang

State Key Laboratory of Structural Chemistry

G

Guanghao Lu

Frontier Institute of Science and Technology

L

Laju Bu