Advancements in low-density crystalline silicon allotropes
Abstract
While numerous crystalline Si allotropes have been predicted in recent years and, in several instances, synthesized under high pressure, the exploration of Si phases with a lower density than conventional diamond Si (d-Si) is still in its infancy. Theoretical calculations on the electronic properties of these expanded Si forms suggest that, unlike the most stable d-Si structure, many may possess direct or quasi-direct bandgaps and only exhibit slightly higher formation energies than d-Si. The few that have been synthesized already display exciting optical properties, making them promising candidates for optoelectronic and photovoltaic applications. Their unique open-framework, guest–host structures enable distinctive interactions between Si and interstitial guest/dopant atoms, offering exciting potentials in spintronics, energy storage, and bio/medical technologies. In this Perspective, we provide an introduction and overview of the latest theoretical and experimental advancements in low-density Si allotropes, emphasizing their potential in various electronic and energy-related applications. This work also highlights the critical challenges and future directions for the continued development of these Si allotropes for next-generation technological applications.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (6)
Yinan Liu
Joseph P. Briggs
Department of Chemical and Biological Engineering, Colorado School of Mines 1 , Golden, Colorado 80401,
Reuben T. Collins
Department of Physics, Colorado School of Mines 2 , Golden, Colorado 80401,
Meenakshi Singh
Department of Physics, Colorado School of Mines 2 , Golden, Colorado 80401,
P. Craig Taylor
Department of Physics, Colorado School of Mines 2 , Golden, Colorado 80401,
Carolyn A. Koh
Department of Chemical and Biological Engineering, Colorado School of Mines 1 , Golden, Colorado 80401,