Adjusting Schottky barrier height and enhancing diode performances in 1T-MoT2/WSeTe (MoSeTe) heterojunctions by interlayer flipping
Abstract
Two-dimensional (2D) Janus materials have received significant attention due to their unique physical structure and superior electronic and optical properties. Here, we investigate the diode performance of 2D Janus WSeTe or MoSeTe vertical contact with 2D 1T-MoTe2 using ab initio quantum transport simulations. When the Te atomic layer of WSeTe or MoSeTe contacts with 1T-MoTe2 (known as type-A heterojunction), the contact interface exhibits significant Fermi level pinning (FLP), resulting in a larger Schottky barrier height (SBH). Through interlayer flipping, the Se atomic layer of WSeTe or MoSeTe comes into contact with 1T-MoTe2 (known as type-B heterojunction), FLP at the contact interface will be significantly suppressed, resulting in obvious reduction of the SBH. Therefore, Schottky diodes based on type-B heterojunction exhibit superior performances with higher rectification ratio and larger photocurrent compared to Schottky diodes based on type-A heterojunction.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (8)
Qian Liu
Xu-Dong Huang
Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics and Electronic Science, Changsha University of Science and Technology 1 , Changsha 410114,
Jian-Ju Chen
Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics and Electronic Science, Changsha University of Science and Technology 1 , Changsha 410114,
Dan Wu
Key Laboratory of Freshwater Fish Reproduction and Development, Ministry of Education, State Key Laboratory Breeding Base of Eco-Environments and Bio-Resources of the Three Gorges Reservoir Region, School of Life Sciences, Southwest University
Xiao-Qing Deng
Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics and Electronic Science, Changsha University of Science and Technology 1 , Changsha 410114,
Zhi-Qiang Fan
Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics and Electronic Science, Changsha University of Science and Technology 1 , Changsha 410114,
Hai-Qing Xie
Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics and Electronic Science, Changsha University of Science and Technology 1 , Changsha 410114,
Ke-Qiu Chen
Department of Applied Physics, School of Physics and Electronics, Hunan University 3 , Changsha 410082,