Active noise reduction in gated quantum devices
Abstract
Solid-state quantum technologies such as quantum dot qubits and quantum electrical metrology circuits rely on ultra-low energy quantum phenomena, making them susceptible to various forms of environmental noise. Conventional passive filtering schemes can reduce high-frequency noise but are often ineffective against low-frequency interference, like powerline or instrument-induced. Extending such filters to lower frequencies causes issues such as longer stabilization times, slower system response, and increased Johnson noise, which impede low-frequency transport measurements. To address these limitations, we propose and experimentally demonstrate a generalized active noise cancelation scheme for quantum devices operating at sub-Kelvin temperatures. Our approach compensates periodic environmental interference by dynamically injecting a phase-coherent anti-noise signal directly into the device. We employ an automated feedback protocol featuring beat frequency reduction and adaptive phase-amplitude tuning, enabling real-time compensation without any manual intervention. Unlike post-processing or passive filtering, this method suppresses noise at the device level without introducing additional time constants. We implement the scheme on a gate-defined Si/SiGe quantum dot acting as a candidate system subject to strong 50 Hz powerline interference and validate its effectiveness through acquiring Coulomb blockade oscillations and Coulomb diamond plots. The technique achieves substantial suppression of both the targeted interference and the overall noise floor, thereby stabilizing transport characteristics and enhancing device fidelity. While demonstrated on a quantum dot, the proposed framework is broadly applicable to a wide class of solid-state quantum devices where deterministic noise presents a critical bottleneck. Our results establish active anti-noise injection as a versatile strategy for advancing noise-resilient quantum measurement platforms.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (8)
Rajat Bharadwaj
School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram 1 , Kerala 695551,
Parvathy Gireesan
School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram 1 , Kerala 695551,
Harikrishnan Sundaresan
School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram 1 , Kerala 695551,
Chithra H. Sharma
Christian-Albrechts-Universität zu Kiel, Institut für Experimentelle und Angewandte Physik 2 , 24098 Kiel,
Lucky Donald L. Kynshi
School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram 1 , Kerala 695551,
Prasad Muragesh
School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram 1 , Kerala 695551,
D. Bougeard
Fakultät für Physik, Universität Regensburg 4 , Regensburg 93040,
Madhu Thalakulam
School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram 1 , Kerala 695551,