A temperature-insensitive nonlinear silicon bulk acoustic oscillator

S S. Dabas (Electrical and Computer Engineering Department, University of Florida 2 , Gainesville, Florida 32611,) S S. Mishra B B. Jabbari (Electrical and Computer Engineering Department, University of Michigan 1 , Ann Arbor, Michigan 48109,) D D. Mo (Electrical and Computer Engineering Department, University of Florida 1 , Gainesville, Florida 32611,) R R. Kundu (Electrical and Computer Engineering Department, University of Florida 1 , Gainesville, Florida 32611,) E E. Ezike (Electrical and Computer Engineering Department, University of Florida 1 , Gainesville, Florida 32611,) S S. Mondal G G. Baucom (Material Science and Engineering Department, University of Florida 3 , Gainesville, Florida 32611,) H H. Kim Z Z. Mi (Electrical and Computer Engineering Department, University of Michigan 1 , Ann Arbor, Michigan 48109,) B B. Chatterjee (Electrical and Computer Engineering Department, University of Florida 1 , Gainesville, Florida 32611,) R R. Tabrizian (Electrical and Computer Engineering Department, University of Michigan 1 , Ann Arbor, Michigan 48109,)

Abstract

We demonstrate a temperature-stable oscillator based on frequency Duffing in a degenerately doped silicon bulk acoustic wave resonator, transduced by a thin aluminum scandium nitride (AlScN) layer. The resonator operates in the cross-sectional Lamé (X-Lamé) mode at 64.7 MHz, exhibiting an ultra-high quality factor (Q) of 110 000 and a first-order temperature coefficient of frequency (TCF1) compensation. Additionally, the resonator provides amplitude-dependent frequency tunability through elastic Duffing. A secondary cross-sectional square-extensional (X-SE) mode at 92 MHz, with high linear temperature sensitivity, enables in situ temperature sensing. An oscillator is constructed with autonomous loop-gain control, leveraging the X-SE mode to compensate for the second-order TCF(TCF2) of the X-Lamé mode through nonlinear Duffing. This results in a frequency reference with a third-order temperature characteristic, featuring an insensitive region around the inflection points, with a TCF3 of 7 ppb/°C3. An overall frequency drift of ±1.88 ppb is measured for this weakly nonlinear oscillator over 1.47 °C temperature range near the 56 °C inflection point, showing an order of magnitude reduction in instability compared to the linear operation mode.

Article Details

Volume / Issue Vol. 126, Issue 13
Published March 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (12)

S

S. Dabas

Electrical and Computer Engineering Department, University of Florida 2 , Gainesville, Florida 32611,

S

S. Mishra

B

B. Jabbari

Electrical and Computer Engineering Department, University of Michigan 1 , Ann Arbor, Michigan 48109,

D

D. Mo

Electrical and Computer Engineering Department, University of Florida 1 , Gainesville, Florida 32611,

R

R. Kundu

Electrical and Computer Engineering Department, University of Florida 1 , Gainesville, Florida 32611,

E

E. Ezike

Electrical and Computer Engineering Department, University of Florida 1 , Gainesville, Florida 32611,

S

S. Mondal

G

G. Baucom

Material Science and Engineering Department, University of Florida 3 , Gainesville, Florida 32611,

H

H. Kim

Z

Z. Mi

Electrical and Computer Engineering Department, University of Michigan 1 , Ann Arbor, Michigan 48109,

B

B. Chatterjee

Electrical and Computer Engineering Department, University of Florida 1 , Gainesville, Florida 32611,

R

R. Tabrizian

Electrical and Computer Engineering Department, University of Michigan 1 , Ann Arbor, Michigan 48109,