A perspective and review of polarization inverted multilayer BAW resonators based on ScAlN piezoelectric films

T Takahiko Yanagitani (Graduate School of Advanced Science and Engineering, Waseda University 1 , Tokyo 169-8555,)

Abstract

The ScAlN film has a large electromechanical coupling and low mechanical loss, enabling RF filters with wide bandwidth, low insertion loss, and a steep filter skirt. In order to meet the growing demand for RF filters operating above 5 GHz, the use of polarization inverted multilayers is continuously being proposed. This Perspective discusses the advantages of overtone mode operation in polarization inverted multilayers for high-frequency bulk acoustic wave (BAW) filter applications: high parallel resonance Qp, high series resonance Qs, high electromechanical coupling, high power capability, and better acoustic isolation from the electrode and supporting medium. Three potential approaches for ScAlN polarization inverted multilayers: film transfer technique, unusual N-polar growth, and external DC voltage application are overviewed. This Perspective includes an experimental demonstration of an acoustic isolation of polarization inverted 30-layer resonators as well as frequency switching between the fundamental mode and the third overtone mode in the currently commercial frequency range of 1.3–3.5 GHz. This article provides a metrics of Q and electromechanical coupling coefficient of recently reported BAW and Lamb wave resonators above 5 GHz, along with experimental data on the elastic tensor, dielectric constant, electromechanical coupling coefficient, temperature coefficient of frequency, and relative Q values in ScxAl1−xN films with varying Sc concentration.

Article Details

Volume / Issue Vol. 127, Issue 23
Published December 08, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (1)

T

Takahiko Yanagitani

Graduate School of Advanced Science and Engineering, Waseda University 1 , Tokyo 169-8555,