A K-band kinetic-inductance parametric amplifier near the quantum limit

C Chaofan Wang (Department of Electrical Engineering, Yale University , New Haven, Connecticut 06520,) S Shihan Liu (College of Chemistry and Molecular Sciences) Y Yufeng Wu D Danqing Wang M Manuel C. C. Pace (Department of Electrical Engineering, Yale University , New Haven, Connecticut 06520,) X Xiangzheng Li H Hong X. Tang

Abstract

Advancing superconducting quantum devices to higher operating frequencies broadens their functionality and enables operation at elevated temperatures, but it also requires near-quantum-limited amplifiers beyond the few-gigahertz regime. Here, we present a junction-free, kinetic-inductance parametric amplifier based on thin-film niobium nitride (NbN) operating at 23 GHz in the microwave K-band, achieving a gain up to 40 dB, a 100 MHz gain–bandwidth product, a 1 dB saturation input power of −85 dBm with 23 dB gain, and added noise not greater than 1.4 quanta for phase-preserving amplification. Leveraging the large superconducting gap of NbN, this architecture can be extended to even higher frequencies, supporting applications such as high-fidelity readout of millimeter-wave superconducting qubits and axion searches over an expanded mass window.

Article Details

Volume / Issue Vol. 128, Issue 25
Published June 22, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

C

Chaofan Wang

Department of Electrical Engineering, Yale University , New Haven, Connecticut 06520,

S

Shihan Liu

College of Chemistry and Molecular Sciences

Y

Yufeng Wu

D

Danqing Wang

M

Manuel C. C. Pace

Department of Electrical Engineering, Yale University , New Haven, Connecticut 06520,

X

Xiangzheng Li

H

Hong X. Tang