A K-band kinetic-inductance parametric amplifier near the quantum limit
Abstract
Advancing superconducting quantum devices to higher operating frequencies broadens their functionality and enables operation at elevated temperatures, but it also requires near-quantum-limited amplifiers beyond the few-gigahertz regime. Here, we present a junction-free, kinetic-inductance parametric amplifier based on thin-film niobium nitride (NbN) operating at 23 GHz in the microwave K-band, achieving a gain up to 40 dB, a 100 MHz gain–bandwidth product, a 1 dB saturation input power of −85 dBm with 23 dB gain, and added noise not greater than 1.4 quanta for phase-preserving amplification. Leveraging the large superconducting gap of NbN, this architecture can be extended to even higher frequencies, supporting applications such as high-fidelity readout of millimeter-wave superconducting qubits and axion searches over an expanded mass window.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (7)
Chaofan Wang
Department of Electrical Engineering, Yale University , New Haven, Connecticut 06520,
Shihan Liu
College of Chemistry and Molecular Sciences
Yufeng Wu
Danqing Wang
Manuel C. C. Pace
Department of Electrical Engineering, Yale University , New Haven, Connecticut 06520,
Xiangzheng Li
Hong X. Tang