A highly integrated three-axis vector diamond quantum magnetometer with a compact electrical package

X Xiao Peng F Fei Xie (State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China) Y Yaochen Zhu (State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,) X Xin Luo Q Qihui Liu D Dan Wang Y Yuqiang Hu (School of Microelectronics, Shanghai University 3 , Shanghai 200444,) J Jiachen Han (School of Microelectronics, Shanghai University 3 , Shanghai 200444,) L Lingyun Li (State Key Laboratory of Synergistic Chem-Bio Synthesis, School of Chemistry and Chemical Engineering, New Cornerstone Science Laboratory, Frontiers Science Center for Transformative Molecules, Zhang Jiang Institute for Advanced Study and National Center for Translational Medicine, Shanghai Jiao Tong University) J Jianping Liu H Hao Chen J Jiangong Cheng (State Key Lab of Transducer Technology Shanghai Institute of Microsystem and Information Technology) Z Zhenyu Wu

Abstract

Diamond nitrogen-vacancy (NV) center has been widely studied as a high-sensitivity solid-state quantum sensor with a wide range of applications, including magnetometry, thermometry manometry, and chemical sensing. However, its application in practical scenarios remains challenging due to difficulties of component manufacturing, miniaturization, and integration for NV control and readout. Here, we demonstrate an all-electric driving diamond sensor fabricated using standard microfabrication processes and micro-assembly, achieving integration of five key components—laser diode, diamond, microwave antenna, long pass filter, and photodiode in a hermetically sealed package case, with dimensions of 2.72 cm3. The integrated diamond magnetometer achieved a magnetic sensitivity of 2.25 nT · Hz−1/2. Additionally, the inherent crystallographic axes of the diamond are used to simultaneously detect vector magnetic field signals. The design and fabrication process allows for wafer-level assembly, enabling low-cost mass-production and easy integration with peripheral circuits.

Article Details

Volume / Issue Vol. 126, Issue 8
Published February 24, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (13)

X

Xiao Peng

F

Fei Xie

State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China

Y

Yaochen Zhu

State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,

X

Xin Luo

Q

Qihui Liu

D

Dan Wang

Y

Yuqiang Hu

School of Microelectronics, Shanghai University 3 , Shanghai 200444,

J

Jiachen Han

School of Microelectronics, Shanghai University 3 , Shanghai 200444,

L

Lingyun Li

State Key Laboratory of Synergistic Chem-Bio Synthesis, School of Chemistry and Chemical Engineering, New Cornerstone Science Laboratory, Frontiers Science Center for Transformative Molecules, Zhang Jiang Institute for Advanced Study and National Center for Translational Medicine, Shanghai Jiao Tong University

J

Jianping Liu

H

Hao Chen

J

Jiangong Cheng

State Key Lab of Transducer Technology Shanghai Institute of Microsystem and Information Technology

Z

Zhenyu Wu