A high speed response Nafion-based non-volatile RF switch

Y Yehui Shen (College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,) L Lejie Sheng (College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,) Y Yang Song (Sorbonne Université, CNRS, Laboratoire de Chimie de la Matière Condensée de Paris (CMCP), 4 place Jussieu, F-75005 Paris, France) T Tianyu Zhang (State Key Laboratory of Coordination Chemistry, School of Chemistry) B Bowen Cui Z Zixuan Wang Z Zhikuang Cai (National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, College of Integrated Circuit Science and Engineering (College of Industry Education Integration), Nanjing University of Posts and Telecommunications 2 , Nanjing 210023,) X Xianwu Tang (School of Communications and Information Engineering, Nanjing University of Posts and Telecommunications 4 , Nanjing 210003,) R Rongqing Xu (College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,) G Guangxu Shen (College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,) G Gangyi Zhu (College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,)

Abstract

Radio frequency (RF) switches are pivotal components in modern wireless communication systems, playing a crucial role in 5 G, Internet of Things (IoT), and satellite communications. Non-volatile devices that offer zero static power consumption and miniaturization present a promising avenue for the fabrication of RF switches through resistive state switching using memristors. Nafion, a fluorosulphonated polytetrafluoroethylene copolymer, served as the dielectric in this study, enabling the preparation of Nafion-based non-volatile RF switches via a micro-nano process. The fabricated Nafion-based non-volatile RF switch exhibits a low insertion loss of 0.68 dB and an isolation of −11.55 dB at 43.5 GHz. It also has a nanosecond switching response time of 45 ns turn-on process, a critical performance metric for non-volatile RF devices. In addition, this device is switched by DC pulses, which significantly reduce the operational energy consumption of the RF switch. This advancement facilitates the development of reconfigurable wireless communication systems with high frequency.

Article Details

Volume / Issue Vol. 126, Issue 24
Published June 16, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (11)

Y

Yehui Shen

College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,

L

Lejie Sheng

College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,

Y

Yang Song

Sorbonne Université, CNRS, Laboratoire de Chimie de la Matière Condensée de Paris (CMCP), 4 place Jussieu, F-75005 Paris, France

T

Tianyu Zhang

State Key Laboratory of Coordination Chemistry, School of Chemistry

B

Bowen Cui

Z

Zixuan Wang

Z

Zhikuang Cai

National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, College of Integrated Circuit Science and Engineering (College of Industry Education Integration), Nanjing University of Posts and Telecommunications 2 , Nanjing 210023,

X

Xianwu Tang

School of Communications and Information Engineering, Nanjing University of Posts and Telecommunications 4 , Nanjing 210003,

R

Rongqing Xu

College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,

G

Guangxu Shen

College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,

G

Gangyi Zhu

College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,