A flexible multi-gate organic electrochemical synaptic transistor for image processing

J Jingwen Wang Y Yunchao Xu (Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics, Central South University 1 , Changsha, Hunan 410083,) C Chenxing Jin (Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics, Central South University 1 , Changsha, Hunan 410083,) B Biao Zeng (Center for Disease Neurogenomics, Icahn School of Medicine at Mount Sinai, New York, NY, USA.) J Jia Sun (National Medical Products Administration Key Laboratory for Research and Evaluation of Drug Metabolism and Guangdong Provincial Key Laboratory of New Drug Screening, School of Pharmaceutical Sciences, Southern Medical University)

Abstract

In this study, a P3HT-based multi-gate frequency-dependent synaptic transistor is fabricated, which demonstrates significant advantages in mimicking the transmission characteristics of biological synaptic activities. The proposed device simulates outputs related to frequency and gate voltage modulation. This device can respond differently to inputs ranging from 0.75 to 11.11 Hz, and at the same input frequency, it exhibits different responses by varying the control gate voltage from 0 to −0.8 V. This innovative design can dynamically adjust the cutoff frequency, enhancing edge feature processing in images, thereby significantly improving the recognition accuracy of information in blurry images that can be difficult for humans to distinguish. Our results provide a hardware edge-computing image processing method, overcoming the limitations of traditional single-gate transistors that typically have fixed parameters. The recognition accuracy of information in blurry images preprocessed by this device improved significantly from 80% to 100%. Combined with the multi-gate design, this synaptic device excels not only in edge enhancement and image processing but also offers robust hardware support for future neuromorphic electronics.

Article Details

Volume / Issue Vol. 126, Issue 5
Published February 03, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

J

Jingwen Wang

Y

Yunchao Xu

Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics, Central South University 1 , Changsha, Hunan 410083,

C

Chenxing Jin

Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics, Central South University 1 , Changsha, Hunan 410083,

B

Biao Zeng

Center for Disease Neurogenomics, Icahn School of Medicine at Mount Sinai, New York, NY, USA.

J

Jia Sun

National Medical Products Administration Key Laboratory for Research and Evaluation of Drug Metabolism and Guangdong Provincial Key Laboratory of New Drug Screening, School of Pharmaceutical Sciences, Southern Medical University