A deep insight into electronic and ionic transport properties of solid-state sodium electrolyte Na3SbSe4

I Il-Jin Kim (Computational Materials Design, Faculty of Materials Science, Kim Il Sung University , Ryongnam-dong, Taesong District, Pyongyang,) T Tae-Il Ri (Computational Materials Design, Faculty of Materials Science, Kim Il Sung University , Ryongnam-dong, Taesong District, Pyongyang,) J Jin-Song Kim (Computational Materials Design, Faculty of Materials Science, Kim Il Sung University , Ryongnam-dong, Taesong District, Pyongyang,) S Suk-Gyong Hwang (Computational Materials Design, Faculty of Materials Science, Kim Il Sung University , Ryongnam-dong, Taesong District, Pyongyang,) C Chol-Jun Yu (Computational Materials Design, Faculty of Materials Science, Kim Il Sung University , Taesong District, Pyongyang,)

Abstract

Low electronic and high-ionic conductivities are indispensable for viable solid-state electrolytes (SSEs), which are key components of all-solid-state batteries. Here, we provide a deep atomistic insight into electronic and ionic transport properties of antimony-based sodium selenide Na3SbSe4 as a promising SSE for sodium-ion batteries, using highly accurate first-principles calculations and molecular dynamics (MD) simulations. Our calculations of phonon dispersions within the self-consistent phonon theory and elastic constants confirm dynamical and mechanical stabilities with ductility favorable for a good contact with electrodes. We determine bandgap of 1.8 eV by applying the GW method and calculate electronic conductivities considering the phonon, deformation, and impurity scatterings, revealing that Na3SbSe4 behaves as insulator at low carrier concentration and low temperature while semiconductor otherwise. Furthermore, we perform MD simulations with machine learning interatomic potential, demonstrating high Na ionic conductivity of 1.57 mS/cm at room temperature with a low activation energy of 0.19 eV.

Article Details

Volume / Issue Vol. 129, Issue 2
Published July 13, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

I

Il-Jin Kim

Computational Materials Design, Faculty of Materials Science, Kim Il Sung University , Ryongnam-dong, Taesong District, Pyongyang,

T

Tae-Il Ri

Computational Materials Design, Faculty of Materials Science, Kim Il Sung University , Ryongnam-dong, Taesong District, Pyongyang,

J

Jin-Song Kim

Computational Materials Design, Faculty of Materials Science, Kim Il Sung University , Ryongnam-dong, Taesong District, Pyongyang,

S

Suk-Gyong Hwang

Computational Materials Design, Faculty of Materials Science, Kim Il Sung University , Ryongnam-dong, Taesong District, Pyongyang,

C

Chol-Jun Yu

Computational Materials Design, Faculty of Materials Science, Kim Il Sung University , Taesong District, Pyongyang,