A comprehensive study on the sandwich stacking structures of antiferroelectric/ferroelectric doped hafnium oxide

Abstract

In this paper, the combinations of sandwich stacking structures of antiferroelectric/ferroelectric doped hafnium oxide are systematically explored. The sandwich stacking ferroelectric capacitors with the optimal structure (2 nm ferroelectric HZO/4 nm antiferroelectric HZO/2 nm ferroelectric HZO) exhibit high remanent polarization (2Pr = 48 μC/cm2), low coercive field (1.15 MV/cm), and excellent retention ability (8% degraded Pr after 105 s) at a low operating voltage of 1.8 V. The endurance of this structure has also been enhanced to over 1010 cycles, compared with the control group of 8 nm ferroelectric HZO (∼109 cycles). This study provides a promising solution for the application of the embedded FeRAM and advanced silicon technology nodes with low-power consumption.