A 2.7 kV AlGaN/GaN high electron mobility transistor with an anti-parallel low turn-on voltage GaN Schottky barrier diode

Abstract

In this work, AlGaN/GaN reverse conduction HEMTs (RC-HEMTs) integrated with anti-parallel Schottky barrier diodes (SBDs) are demonstrated. Benefiting from the idealized Schottky interface of AlGaN/GaN SBDs with recessed anode, which enables direct contact between GaN channel and anode metal, low reverse turn-on voltage (VR-T) of −0.75 V and high ION/IOFF ratio of 8.5 × 107 are obtained. Based on the randomly measured 100 RC-HEMTs with LGD of 15 μm, ultra-high VR-T uniformity with standard deviation of 18 mV and forward on-resistance (RON) uniformity with standard deviation of 0.3 Ω mm are calculated, respectively. Furthermore, the breakdown voltage of the fabricated AlGaN/GaN RC-HEMT with a 30-μm LGD can reach 2.7 kV, which shows great promise for medium-voltage power applications.