2.87 kV/3.68 mΩ cm2 low forward voltage Ga2O3 vertical SBD with nitrogen-doped protecting ring and mesa termination
Abstract
In this paper, a vertical Ga2O3 Schottky barrier diode (SBD) with nitrogen (N)-doped protecting ring and mesa termination (NMT-SBD) is fabricated. In addition to the electric field optimization effect of the mesa termination, the NMT-SBD also features the N-doped protecting ring to reduce the electric field near the anode edge. This further increases the breakdown voltage (BV) and enables the Ni/Ga2O3 contact with a low barrier height to be used as the anode, leading to a low forward voltage (VF). The experimental results show that the device achieves a BV of 2.87 kV and a specific on resistance of 3.68 mΩ cm2, resulting in a high power figure of merit of 2.24 GW/cm2. Furthermore, the device exhibits a low VF (@100 A/cm2) of 1.3 V, confirming its excellent performance with low conduction loss. This work demonstrates a promising strategy for fabricating high-power Ga2O3 vertical Schottky barrier diode.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (9)
Xueli Han
Advanced Laser and Optoelectronic Functional Materials Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences 1 , Shanghai 201800,
Xiaorui Xu
College of Physics and Information Engineering, Fuzhou University 3 , Fuzhou 350116,
Zhengbo Wang
Hanchao Yang
The College of Physics and Information Engineering, Fuzhou University 3 , Fuzhou 350116,
Desen Chen
College of Physics and Information Engineering, Fuzhou University 3 , Fuzhou 350116,
Yicong Deng
College of Physics and Information Engineering, Fuzhou University 3 , Fuzhou 350116,
Duanyang Chen
Advanced Laser and Optoelectronic Functional Materials Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences 4 , Shanghai 201800,
Haizhong Zhang
Zhejiang Key Laboratory of Low‐carbon Control Technology for Industrial Pollution College of Environment Zhejiang University of Technology No. 18 Chaowang Road Hangzhou 310014 China
Hongji Qi
Advanced Laser and Optoelectronic Functional Materials Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences 4 , Shanghai 201800,